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Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2.
Nguyen, Tuan Dung; Jiang, Jinbao; Song, Bumsub; Tran, Minh Dao; Choi, Wooseon; Kim, Ji Hee; Kim, Young-Min; Duong, Dinh Loc; Lee, Young Hee.
Afiliação
  • Nguyen TD; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
  • Jiang J; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Song B; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
  • Tran MD; School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China.
  • Choi W; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
  • Kim JH; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Kim YM; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
  • Duong DL; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Lee YH; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
Adv Sci (Weinh) ; 8(24): e2102911, 2021 Dec.
Article em En | MEDLINE | ID: mdl-34713632
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2021 Tipo de documento: Article