1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.

He, Wei; Li, Jian; Liao, Zeliang; Lin, Feng; Wu, Junye; Wang, Bing; Wang, Maojun; Liu, Nan; Chiu, Hsien-Chin; Kuo, Hao-Chung; Lin, Xinnan; Li, Jingbo; Liu, Xinke

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.

He, Wei; Li, Jian; Liao, Zeliang; Lin, Feng; Wu, Junye; Wang, Bing; Wang, Maojun; Liu, Nan; Chiu, Hsien-Chin; Kuo, Hao-Chung; Lin, Xinnan; Li, Jingbo; Liu, Xinke.

Afiliação

He W; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China.
Li J; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China.
Liao Z; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China.
Lin F; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China.
Wu J; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China.
Wang B; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China.
Wang M; Institute of Microelectronics, Peking University, Beijing, 100871, China.
Liu N; Shaanxi Reactor Microelectronics Co., Ltd., Xi'an, 710075, China.
Chiu HC; Department of Electronic Engineering, Chang Gung University, Taoyuan, 333, Taiwan.
Kuo HC; Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
Lin X; The Shenzhen Key Lab of Advanced Electron Device and Integration, ECE, Peking University Shenzhen Graduate School, Shenzhen, 518055, China.
Li J; Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, China.
Liu X; College of Materials Science and Engineering, College of Electronics and Information Engineering, College of Physics and Optoelectronic Engineering, Institute of Microelectronics (IME), Shenzhen University, Shenzhen, 518060, China. xkliu@szu.edu.cn.

Nanoscale Res Lett ; 17(1): 14, 2022 Jan 15.

Article em En | MEDLINE | ID: mdl-35032235

Palavras-chave

Breakdown; Free standing gallium nitride (GaN); GaN MOSFET; TCAD; Trench MOSFET

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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