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Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED.
Lu, Shiqiang; Luo, Zongyan; Li, Jinchai; Lin, Wei; Chen, Hangyang; Liu, Dayi; Cai, Duanjun; Huang, Kai; Gao, Na; Zhou, Yinghui; Li, Shuping; Kang, Junyong.
Afiliação
  • Lu S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Luo Z; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Li J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China. jinchaili@xmu.edu.cn.
  • Lin W; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Chen H; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China. chycn@xmu.edu.cn.
  • Liu D; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Cai D; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Huang K; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Gao N; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Zhou Y; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Li S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
  • Kang J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
Nanoscale Res Lett ; 17(1): 13, 2022 Jan 15.
Article em En | MEDLINE | ID: mdl-35032237
ABSTRACT
A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China