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The role of lattice dynamics in ferroelectric switching.
Shi, Qiwu; Parsonnet, Eric; Cheng, Xiaoxing; Fedorova, Natalya; Peng, Ren-Ci; Fernandez, Abel; Qualls, Alexander; Huang, Xiaoxi; Chang, Xue; Zhang, Hongrui; Pesquera, David; Das, Sujit; Nikonov, Dmitri; Young, Ian; Chen, Long-Qing; Martin, Lane W; Huang, Yen-Lin; Íñiguez, Jorge; Ramesh, Ramamoorthy.
Afiliação
  • Shi Q; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. shiqiwu@scu.edu.cn.
  • Parsonnet E; College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China. shiqiwu@scu.edu.cn.
  • Cheng X; Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Fedorova N; Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA.
  • Peng RC; Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg.
  • Fernandez A; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Information and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.
  • Qualls A; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China.
  • Huang X; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Chang X; Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Zhang H; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Pesquera D; College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
  • Das S; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Nikonov D; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Young I; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Chen LQ; Material Research Centre, Indian Institute of Science, Bangalore, 560012, India.
  • Martin LW; Components Research, Intel Corporation, Hillsboro, OR, 97142, USA.
  • Huang YL; Components Research, Intel Corporation, Hillsboro, OR, 97142, USA.
  • Íñiguez J; Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA.
  • Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Nat Commun ; 13(1): 1110, 2022 Mar 02.
Article em En | MEDLINE | ID: mdl-35236832
ABSTRACT
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10's of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos