An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices.

Alhasani, Reem; Yabe, Taichi; Iyama, Yutaro; Oi, Nobutaka; Imanishi, Shoichiro; Nguyen, Quang Ngoc; Kawarada, Hiroshi

Alhasani, Reem; Yabe, Taichi; Iyama, Yutaro; Oi, Nobutaka; Imanishi, Shoichiro; Nguyen, Quang Ngoc; Kawarada, Hiroshi.

Afiliação

Alhasani R; Department of Nano Science and NanoEngineering, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
Yabe T; National Center of Nano Technology and Semiconductor, King Abdulaziz City for Science and Technology, Riyadh, 12354, Saudi Arabia.
Iyama Y; Department of Nano Science and NanoEngineering, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
Oi N; Department of Nano Science and NanoEngineering, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
Imanishi S; Department of Nano Science and NanoEngineering, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
Nguyen QN; Department of Nano Science and NanoEngineering, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
Kawarada H; Department of Communications and Computer Engineering, School of Fundamental Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-0051, Japan.

Sci Rep ; 12(1): 4203, 2022 Mar 10.

Article em En | MEDLINE | ID: mdl-35273177

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Japão

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