Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays.
Nanoscale
; 14(13): 5239-5244, 2022 Mar 31.
Article
em En
| MEDLINE
| ID: mdl-35315850
ABSTRACT
Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (VB-) centers. Here, we demonstrate a scalable method to enhance the VB- emission using an array of SiO2 nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the VB- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the VB- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale
Ano de publicação:
2022
Tipo de documento:
Article
País de afiliação:
Austrália