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Mapping 1D Confined Electromagnetic Edge States in 2D Monolayer Semiconducting MoS2 Using 4D-STEM.
Wen, Yi; Fang, Shiang; Coupin, Matthew; Lu, Yang; Ophus, Colin; Kaxiras, Efthimios; Warner, Jamie H.
Afiliação
  • Wen Y; Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, United Kingdom.
  • Fang S; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.
  • Coupin M; Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 E Dean Keeton Street, Austin, Texas 78712, United States.
  • Lu Y; Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, United Kingdom.
  • Ophus C; National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States.
  • Kaxiras E; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.
  • Warner JH; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
ACS Nano ; 16(4): 6657-6665, 2022 Apr 26.
Article em En | MEDLINE | ID: mdl-35344654
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Reino Unido
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Reino Unido