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Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions.
Dong, Jianting; Li, Xinlu; Gurung, Gautam; Zhu, Meng; Zhang, Peina; Zheng, Fanxing; Tsymbal, Evgeny Y; Zhang, Jia.
Afiliação
  • Dong J; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China.
  • Li X; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China.
  • Gurung G; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA.
  • Zhu M; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China.
  • Zhang P; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China.
  • Zheng F; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China.
  • Tsymbal EY; Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA.
  • Zhang J; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China.
Phys Rev Lett ; 128(19): 197201, 2022 May 13.
Article em En | MEDLINE | ID: mdl-35622046
ABSTRACT
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that noncollinear AFM metals, such as Mn_{3}Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn_{3}Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four nonvolatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other noncollinear AFM metals like Mn_{3}Ge, Mn_{3}Ga, Mn_{3}Pt, and Mn_{3}GaN. Our work provides a robust method for detecting the Néel vector in noncollinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China