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Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface.
Hsain, H Alex; Lee, Younghwan; Lancaster, Suzanne; Lomenzo, Patrick D; Xu, Bohan; Mikolajick, Thomas; Schroeder, Uwe; Parsons, Gregory N; Jones, Jacob L.
Afiliação
  • Hsain HA; Materials Science and Engineering Department, North Carolina State University, 911 Partners Way, Raleigh, NC, 27695 United States of America.
  • Lee Y; NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
  • Lancaster S; Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
  • Lomenzo PD; NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
  • Xu B; NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
  • Mikolajick T; NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
  • Schroeder U; NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
  • Parsons GN; TU Dresden, Chair of Nanoelectronics, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
  • Jones JL; NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany.
Nanotechnology ; 34(12)2023 Jan 13.
Article em En | MEDLINE | ID: mdl-36538824
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article