Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress.

Neto, João; Dahiya, Abhishek Singh; Zumeit, Ayoub; Christou, Adamos; Ma, Sihang; Dahiya, Ravinder

Neto, João; Dahiya, Abhishek Singh; Zumeit, Ayoub; Christou, Adamos; Ma, Sihang; Dahiya, Ravinder.

Afiliação

Neto J; James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom.
Dahiya AS; James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom.
Zumeit A; James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom.
Christou A; James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom.
Ma S; James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom.
Dahiya R; Bendable Electronics and Sustainable Technologies (BEST) Group, Electrical and Computer Engineering Department, Northeastern University, Boston, Massachusetts 02115, United States.

ACS Appl Mater Interfaces ; 15(7): 9618-9628, 2023 Feb 22.

Article em En | MEDLINE | ID: mdl-36774654

Palavras-chave

endurance; flexible electronics; printed electronics; silicon nanoribbons; transistors

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Reino Unido

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