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Electric-field control of reversible electronic and magnetic transitions in two-dimensional oxide monolayer magnets.
Wang, Guopeng; Hu, Tao; Xiong, Yimin; Liu, Xue; Shen, Shengchun; Wang, Jianlin; Che, Mengqian; Cui, Zhangzhang; Zhang, Yingying; Yang, Luyi; Li, Zhengcao; Lu, Yalin; Tian, Mingliang.
Afiliação
  • Wang G; School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China. Electronic address: 20239@ahu.edu.cn.
  • Hu T; School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China.
  • Xiong Y; School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China; Hefei National Laboratory, Hefei 230028, China.
  • Liu X; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
  • Shen S; Department of Physics, University of Science and Technology of China, Hefei 230026, China.
  • Wang J; Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China.
  • Che M; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
  • Cui Z; Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China. Electronic address: zzcui@ustc.e
  • Zhang Y; State Key Laboratory for New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China. Electronic address: zyy2023@tsinghua.edu.cn.
  • Yang L; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
  • Li Z; State Key Laboratory for New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
  • Lu Y; Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China.
  • Tian M; School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China. Electronic address: mltian@ahu.edu.cn.
Sci Bull (Beijing) ; 68(15): 1632-1639, 2023 Aug 15.
Article em En | MEDLINE | ID: mdl-37429776
ABSTRACT
Atomically thin oxide magnetic materials are highly desirable due to the promising potential to integrate two-dimensional (2D) magnets into next-generation spintronics. Therefore, 2D oxide magnetism is expected to be effectively tuned by the magnetic and electrical fields, holding prospective for future low-dissipation electronic devices. However, the electric-field control of 2D oxide monolayer magnetism has rarely been reported. Here, we present the realization of 2D monolayer magnetism in oxide (SrRuO3)1/(SrTiO3)N (N = 1, 3) superlattices that shows an efficient and reversible phase transition through electric-field controlled proton (H+) evolution. By using ionic liquid gating to modulate the proton concentration in (SrRuO3)1/(SrTiO3)1 superlattice, an electric-field induced metal-insulator transition was observed, along with gradually suppressed magnetic ordering and modulated magnetic anisotropy. Theoretical analysis reveals that proton intercalation plays a crucial role in both electronic and magnetic phase transitions. Strikingly, SrTiO3 layers can act as a proton sieve, which have a significant influence on proton evolution. Our work stimulates the tuning functionality of 2D oxide monolayer magnetism by voltage control, providing potential for future energy-efficient electronics.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2023 Tipo de documento: Article