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Observation of Mott instability at the valence transition of f-electron system.
Yang, Haifeng; Gao, Jingjing; Cao, Yingying; Xu, Yuanji; Liang, Aiji; Xu, Xiang; Chen, Yujie; Liu, Shuai; Huang, Kui; Xu, Lixuan; Wang, Chengwei; Cui, Shengtao; Wang, Meixiao; Yang, Lexian; Luo, Xuan; Sun, Yuping; Yang, Yi-Feng; Liu, Zhongkai; Chen, Yulin.
Afiliação
  • Yang H; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Gao J; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
  • Cao Y; Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, China.
  • Xu Y; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Liang A; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Xu X; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Chen Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Liu S; ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, China.
  • Huang K; State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
  • Xu L; State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
  • Wang C; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Cui S; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Wang M; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
  • Yang L; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
  • Luo X; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Sun Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Yang YF; ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, China.
  • Liu Z; State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
  • Chen Y; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
Natl Sci Rev ; 10(6): nwad035, 2023 Jun.
Article em En | MEDLINE | ID: mdl-37484834
ABSTRACT
Mott physics plays a critical role in materials with strong electronic correlations. Mott insulator-to-metal transition can be driven by chemical doping, external pressure, temperature and gate voltage, which is often seen in transition metal oxides with 3d electrons near the Fermi energy (e.g. cuprate superconductor). In 4f-electron systems, however, the insulator-to-metal transition is mostly driven by Kondo hybridization and the Mott physics has rarely been explored in experiments. Here, by combining the angle-resolved photoemission spectroscopy and strongly correlated band structure calculations, we show that an unusual Mott instability exists in YbInCu4 accompanying its mysterious first-order valence transition. This contrasts with the prevalent Kondo picture and demonstrates that YbInCu4 is a unique platform to explore the Mott physics in Kondo lattice systems. Our work provides important insight for the understanding and manipulation of correlated quantum phenomena in the f-electron system.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Natl Sci Rev Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Natl Sci Rev Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China