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InGaN/GaN superlattice underlayer for fabricating of red nanocolumnµ-LEDs with (10-11) plane InGaN/AlGaN MQWs.
Yamada, Jumpei; Mizuno, Ai; Honda, Tatsuya; Yoshida, Keigo; Togashi, Rie; Nomura, Ichirou; Yamaguchi, Tomohiro; Honda, Tohru; Kishino, Katsumi.
Afiliação
  • Yamada J; Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo, Japan.
  • Mizuno A; Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo, Japan.
  • Honda T; Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo, Japan.
  • Yoshida K; Department of Applied Physics, Kogakuin University, 2665-1 Nakanomachi, Hachioji-Shi, Tokyo, Japan.
  • Togashi R; Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo, Japan.
  • Nomura I; Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo, Japan.
  • Yamaguchi T; Department of Applied Physics, Kogakuin University, 2665-1 Nakanomachi, Hachioji-Shi, Tokyo, Japan.
  • Honda T; Department of Applied Physics, Kogakuin University, 2665-1 Nakanomachi, Hachioji-Shi, Tokyo, Japan.
  • Kishino K; Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo, Japan.
Nanotechnology ; 34(43)2023 Aug 14.
Article em En | MEDLINE | ID: mdl-37494895
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Japão
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Japão