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Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality.
Schmiedeke, P; Döblinger, M; Meinhold-Heerlein, M A; Doganlar, C; Finley, J J; Koblmüller, G.
Afiliação
  • Schmiedeke P; Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany.
  • Döblinger M; Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany.
  • Meinhold-Heerlein MA; Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany.
  • Doganlar C; Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany.
  • Finley JJ; Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany.
  • Koblmüller G; Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany.
Nanotechnology ; 35(5)2023 Nov 17.
Article em En | MEDLINE | ID: mdl-37879325
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Alemanha
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Alemanha