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Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices.
Wu, Hao; Fu, Xiaojun; Luo, Jun; Yang, Manlin; Yang, Xiaoyu; Huang, Wei; Zhang, Huan; Xiang, Fan; Pu, Yang; Wang, Ziwei.
Afiliação
  • Wu H; National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.
  • Fu X; National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.
  • Luo J; No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 401332, China.
  • Yang M; National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.
  • Yang X; National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.
  • Huang W; No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 401332, China.
  • Zhang H; No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 401332, China.
  • Xiang F; No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 401332, China.
  • Pu Y; National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.
  • Wang Z; National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.
Micromachines (Basel) ; 14(10)2023 Sep 26.
Article em En | MEDLINE | ID: mdl-37893269
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China