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Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films.
Zhu, Jiyuan; Hu, Shen; Chen, Bojia; Zhang, Yu; Wei, Shice; Guo, Xiangyu; Zou, Xingli; Lu, Xionggang; Sun, Qingqing; Zhang, David W; Ji, Li.
Afiliação
  • Zhu J; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Hu S; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Chen B; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zhang Y; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Wei S; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Guo X; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zou X; State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
  • Lu X; State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
  • Sun Q; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Ji L; School of Microelectronics, Fudan University, Shanghai 200433, China.
J Chem Phys ; 159(17)2023 Nov 07.
Article em En | MEDLINE | ID: mdl-37916595
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Chem Phys Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Chem Phys Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China