In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film.

Cai, Xiangbin; Chen, Chao; Xie, Lin; Wang, Changan; Gui, Zixin; Gao, Yuan; Kentsch, Ulrich; Zhou, Guofu; Gao, Xingsen; Chen, Yu; Zhou, Shengqiang; Gao, Weibo; Liu, Jun-Ming; Zhu, Ye; Chen, Deyang

Cai, Xiangbin; Chen, Chao; Xie, Lin; Wang, Changan; Gui, Zixin; Gao, Yuan; Kentsch, Ulrich; Zhou, Guofu; Gao, Xingsen; Chen, Yu; Zhou, Shengqiang; Gao, Weibo; Liu, Jun-Ming; Zhu, Ye; Chen, Deyang.

Afiliação

Cai X; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China. xcaiak@connect.ust.hk.
Chen C; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore. xcaiak@connect.ust.hk.
Xie L; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Wang C; Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
Gui Z; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, 01328, Germany.
Gao Y; School of Electronics & Communication, Guangdong Mechanical and Electrical Polytechnic, Guangzhou, 510515, China.
Kentsch U; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Zhou G; State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing, 100871, China.
Gao X; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, 01328, Germany.
Chen Y; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Zhou S; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Gao W; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
Liu JM; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, 01328, Germany.
Zhu Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Chen D; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.

Nat Commun ; 14(1): 8174, 2023 Dec 09.

Article em En | MEDLINE | ID: mdl-38071396

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google