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Synthesis and Future Electronic Applications of Topological Nanomaterials.
Jin, Gangtae; Kim, Seo-Hyun; Han, Hyeuk-Jin.
Afiliação
  • Jin G; Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
  • Kim SH; Department of Environment and Energy Engineering, Sungshin Women's University, Seoul 01133, Republic of Korea.
  • Han HJ; Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
Int J Mol Sci ; 25(1)2023 Dec 28.
Article em En | MEDLINE | ID: mdl-38203574
ABSTRACT
Over the last ten years, the discovery of topological materials has opened up new areas in condensed matter physics. These materials are noted for their distinctive electronic properties, unlike conventional insulators and metals. This discovery has not only spurred new research areas but also offered innovative approaches to electronic device design. A key aspect of these materials is now that transforming them into nanostructures enhances the presence of surface or edge states, which are the key components for their unique electronic properties. In this review, we focus on recent synthesis methods, including vapor-liquid-solid (VLS) growth, chemical vapor deposition (CVD), and chemical conversion techniques. Moreover, the scaling down of topological nanomaterials has revealed new electronic and magnetic properties due to quantum confinement. This review covers their synthesis methods and the outcomes of topological nanomaterials and applications, including quantum computing, spintronics, and interconnects. Finally, we address the materials and synthesis challenges that need to be resolved prior to the practical application of topological nanomaterials in advanced electronic devices.
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Metodologias Computacionais / Nanoestruturas Idioma: En Revista: Int J Mol Sci Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Metodologias Computacionais / Nanoestruturas Idioma: En Revista: Int J Mol Sci Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos