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Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning.
Yang, Haitao; Hu, Ruiqi; Wu, Heng; He, Xiaolong; Zhou, Yan; Xue, Yizhe; He, Kexin; Hu, Wenshuai; Chen, Haosen; Gong, Mingming; Zhang, Xin; Tan, Ping-Heng; Hernández, Eduardo R; Xie, Yong.
Afiliação
  • Yang H; Key Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Hu R; Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States.
  • Wu H; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • He X; Key Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Zhou Y; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Xue Y; Phonon Engineering Research Center of Jiangsu Province, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China.
  • He K; Key Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Hu W; Key Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Chen H; Key Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Gong M; Key Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Zhang X; School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China.
  • Tan PH; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Hernández ER; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Xie Y; Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain.
Nano Lett ; 24(9): 2789-2797, 2024 Mar 06.
Article em En | MEDLINE | ID: mdl-38407030
ABSTRACT
Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) and the application of a semantic segmentation convolutional neural network (CNN) to accurately and rapidly identify thicknesses of MoS2 flakes. A second CNN model is trained to provide precise predictions on the twist angle of CVD-grown bilayer flakes. This model harnessed a data set comprising over 10,000 synthetic images, encompassing geometries spanning from hexagonal to triangular shapes. Subsequent validation of the deep learning predictions on twist angles was executed through the second harmonic generation and Raman spectroscopy. Our results introduce a scalable methodology for automated inspection of twisted atomically thin CVD-grown bilayers.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China