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All-electrical skyrmionic magnetic tunnel junction.
Chen, Shaohai; Lourembam, James; Ho, Pin; Toh, Alexander K J; Huang, Jifei; Chen, Xiaoye; Tan, Hang Khume; Yap, Sherry L K; Lim, Royston J J; Tan, Hui Ru; Suraj, T S; Sim, May Inn; Toh, Yeow Teck; Lim, Idayu; Lim, Nelson C B; Zhou, Jing; Chung, Hong Jing; Lim, Sze Ter; Soumyanarayanan, Anjan.
Afiliação
  • Chen S; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Lourembam J; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Ho P; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Toh AKJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Huang J; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Chen X; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Tan HK; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Yap SLK; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Lim RJJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Tan HR; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Suraj TS; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Sim MI; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Toh YT; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Lim I; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Lim NCB; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Zhou J; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Chung HJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Lim ST; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Soumyanarayanan A; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore. anjan@imre.a-star.edu.sg.
Nature ; 627(8004): 522-527, 2024 Mar.
Article em En | MEDLINE | ID: mdl-38509277
ABSTRACT
Topological whirls or 'textures' of spins such as magnetic skyrmions represent the smallest realizable emergent magnetic entities1-5. They hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing6-8. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures9,10. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multimodal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal-20-70% relative to uniformly magnetized states-corresponds directly to skyrmion size. The MTJ exploits complementary nucleation mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three non-volatile electrical states. Crucially, it can electrically write and delete skyrmions to both uniform states with switching energies 1,000 times lower than the state of the art. Here, the applied voltage emulates a magnetic field and, in contrast to conventional MTJs, it reshapes both the energetics and kinetics of the switching transition, enabling deterministic bidirectional switching. Our stack platform enables large readout and efficient switching, and is compatible with lateral manipulation of skyrmionic bits, providing the much-anticipated backbone for all-electrical skyrmionic device architectures9,10. Its wafer-scale realizability provides a springboard to harness chiral spin textures for multibit memory and unconventional computing8,11.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Singapura

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Singapura