Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates.
Opt Express
; 32(7): 11057-11064, 2024 Mar 25.
Article
em En
| MEDLINE
| ID: mdl-38570963
ABSTRACT
We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40â
mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of â¼ 4.108â
cm-2 for both mismatched substrates. In the CW regime the output power of the devices emitting at 3.3 µm exceeded 30â
mW/facet at 20°C. ICLs on GaAs and Si were subsequently aged at 50°C with an injection current of 200â
mA, i.e. five times the laser-threshold current. No degradation was observed after 500â
h of CW operation, demonstrating the high performance of ICLs and their tolerance to dislocations.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2024
Tipo de documento:
Article