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Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces.
Zhang, Xu; Zhu, Tongshuai; Zhang, Shuai; Chen, Zhongqiang; Song, Anke; Zhang, Chong; Gao, Rongzheng; Niu, Wei; Chen, Yequan; Fei, Fucong; Tai, Yilin; Li, Guoan; Ge, Binghui; Lou, Wenkai; Shen, Jie; Zhang, Haijun; Chang, Kai; Song, Fengqi; Zhang, Rong; Wang, Xuefeng.
Afiliação
  • Zhang X; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhu T; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
  • Zhang S; College of Science, China University of Petroleum (East China), Qingdao, 266580, China.
  • Chen Z; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
  • Song A; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhang C; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Gao R; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Niu W; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Chen Y; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Fei F; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Tai Y; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
  • Li G; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China.
  • Ge B; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Lou W; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China.
  • Shen J; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
  • Zhang H; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Chang K; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
  • Song F; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
  • Zhang R; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China. songfengqi@nju.edu.cn.
  • Wang X; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. rzhang
Nat Commun ; 15(1): 2992, 2024 Apr 06.
Article em En | MEDLINE | ID: mdl-38582768
ABSTRACT
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1 T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China