Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy.
Nanomaterials (Basel)
; 14(13)2024 Jun 28.
Article
em En
| MEDLINE
| ID: mdl-38998720
ABSTRACT
We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
Texto completo:
1
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanomaterials (Basel)
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
Romênia