Multilayer stacked crystalline silicon switch with nanosecond-order switching time.
Opt Lett
; 49(15): 4294-4297, 2024 Aug 01.
Article
em En
| MEDLINE
| ID: mdl-39090917
ABSTRACT
To realize compact and denser photonic integrated circuits, three-dimensional integration has been widely accepted and researched. In this article, we demonstrate the operation of a 3D integrated silicon photonic platform fabricated through wafer bonding. Benefiting from the wafer bonding process, the material of all layers is c-Si, which ensures that the mobility is high enough to achieve a nanosecond response via the p-i-n diode shifter. Optical components, including multimode interferences (MMIs), waveguide crossing, and Mach-Zehnder interferometer (MZI)-based switch, are fabricated in different layers and exhibit great performance. The interlayer coupler and crossing achieve a 0.98â
dB coupling loss and <-43.58â
dB cross talk, while the crossing fabricated in the same layer shows <-36.00â
dB cross talk. A nanosecond-order switch response is measured in different layers.
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MEDLINE
Idioma:
En
Revista:
Opt Lett
Ano de publicação:
2024
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Article