Design of angle-resolved illumination optics using nonimaging bi-telecentricity for 193 nm scatterfield microscopy.

Accurate optics-based dimensional measurements of features sized well-below the diffraction limit require a thorough understanding of the illumination within the optical column and of the three-dimensional scattered fields that contain the information required for quantitative metrology. Scatterfield microscopy can pair simulations with angle-resolved tool characterization to improve agreement between the experiment and calculated libraries, yielding sub-nanometer parametric uncertainties. Optimized angle-resolved illumination requires bi-telecentric optics in which a telecentric sample plane defined by a Köhler illumination configuration and a telecentric conjugate back focal plane (CBFP) of the objective lens; scanning an aperture or an aperture source at the CBFP allows control of the illumination beam angle at the sample plane with minimal distortion. A bi-telecentric illumination optics have been designed enabling angle-resolved illumination for both aperture and source scanning modes while yielding low distortion and chief ray parallelism. The optimized design features a maximum chief ray angle at the CBFP of 0.002° and maximum wavefront deviations of less than 0.06 λ for angle-resolved illumination beams at the sample plane, holding promise for high quality angle-resolved illumination for improved measurements of deep-subwavelength structures using deep-ultraviolet light.

Optimizing the nanoscale quantitative optical imaging of subfield scattering targets.

The full 3-D scattered field above finite sets of features has been shown to contain a continuum of spatial frequency information and, with novel optical microscopy techniques and electromagnetic modeling, deep-subwavelength geometrical parameters can be determined. Similarly, by using simulations, scattering geometries and experimental conditions can be established to tailor scattered fields that yield lower parametric uncertainties while decreasing the number of measurements and the area of such finite sets of features. Such optimized conditions are reported through quantitative optical imaging in 193 nm scatterfield microscopy using feature sets up to four times smaller in area than state-of-the-art critical dimension targets.

Three-dimensional deep sub-wavelength defect detection using λ = 193 nm optical microscopy.

Optical microscopy is sensitive both to arrays of nanoscale features and to their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element of optical metrology. Current, well-established optical methods used to identify defects in semiconductor patterning are in jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images of defects is presented using simulated and experimental examples. This new method allows defects as narrow as (16 ± 2) nm (k = 1) to be revealed using 193 nm light with focus and illumination conditions optimized for three-dimensional data analysis. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.

Fourier domain optical tool normalization for quantitative parametric image reconstruction.

There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer-scale changes has been observed when measuring critical dimensions of subwavelength 20 nm features or when imaging defects below 15 nm using angle-resolved and focus-resolved optical data. However, these methods inherently involve complex imaging optics and analysis of complicated three-dimensional electromagnetic fields. This paper develops a new approach to enable the rigorous analysis of three-dimensional, through-focus, or angle-resolved optical images. We use rigorous electromagnetic simulation with enhanced Fourier optical techniques, an approach to optical tool normalization, and statistical methods to evaluate sensitivities and uncertainties in the measurement of subwavelength three-dimensional structures.

Improving optical measurement uncertainty with combined multitool metrology using a Bayesian approach.

Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 22 nm in critical dimension and smaller. When modeling optical measurements, a library of curves is assembled through the simulation of a multidimensional parameter space. A nonlinear regression routine described in this paper is then used to identify an optimum set of parameters that yields the closest experiment-to-theory agreement. However, parametric correlation, measurement noise, and model inaccuracy all lead to measurement uncertainty in the fitting process for optical critical dimension measurements. To improve the optical measurements, other techniques such as atomic force microscopy and scanning electronic microscopy can also be used to provide supplemental a priori information. In this paper, a Bayesian statistical approach is proposed to allow the combination of different measurement techniques that are based on different physical measurements. The effect of this hybrid metrology approach will be shown to reduce the uncertainties of the parameter estimators.

Data-driven approaches to optical patterned defect detection.

Computer vision and classification methods have become increasingly wide-spread in recent years due to ever-increasing access to computation power. Advances in semiconductor devices are the basis for this growth, but few publications have probed the benefits of data-driven methods for improving a critical component of semiconductor manufacturing, the detection and inspection of defects for such devices. As defects become smaller, intensity threshold-based approaches eventually fail to adequately discern differences between faulty and non-faulty structures. To overcome these challenges we present machine learning methods including convolutional neural networks (CNN) applied to image-based defect detection. These images are formed from the simulated scattering of realistic geometries with and without key defects while also taking into account line edge roughness (LER). LER is a known and challenging problem in fabrication as it yields additional scattering that further complicates defect inspection. Simulating images of an intentional defect array, a CNN approach is applied to extend detectability and enhance classification to these defects, even those that are more than 20 times smaller than the inspection wavelength.

Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization.

Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier optical imaging code to simulate the full three-dimensional scattered light field of nominally 15 nm sized structures, accurately replicating the light field as a function of the focus position. Using the full three-dimensional light field, nanometer scale details such as a 2 nm thin conformal oxide and nanometer topography are rigorously fitted for features less than 1/30th of the wavelength in size. The densely packed structures are positioned nearly an order of magnitude closer than the conventional Rayleigh resolution limit and can be measured with sub-nanometer parametric uncertainties. This approach enables a practical measurement sensitivity to size variations of only a few atoms in size using a high throughput optical configuration with broad application in measuring nanometric structures and nanoelectronic devices.

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.

Hybrid metrology, e.g., the combination of several measurement techniques to determine critical dimensions, is an increasingly important approach to meet the needs of the semiconductor industry. A proper use of hybrid metrology may yield not only more reliable estimates for the quantitative characterization of 3-D structures but also a more realistic estimation of the corresponding uncertainties. Recent developments at the National Institute of Standards and Technology (NIST) feature the combination of optical critical dimension (OCD) measurements and scanning electron microscope (SEM) results. The hybrid methodology offers the potential to make measurements of essential 3-D attributes that may not be otherwise feasible. However, combining techniques gives rise to essential challenges in error analysis and comparing results from different instrument models, especially the effect of systematic and highly correlated errors in the measurement on the χ2 function that is minimized. Both hypothetical examples and measurement data are used to illustrate solutions to these challenges.

Scatterfield microscopy for extending the limits of image-based optical metrology.

We have developed a set of techniques, referred to as scatterfield microscopy, in which the illumination is engineered in combination with appropriately designed metrology targets to extend the limits of image-based optical metrology. Previously we reported results from samples with sub-50-nm-sized features having pitches larger than the conventional Rayleigh resolution criterion, which resulted in images having edge contrast and elements of conventional imaging. In this paper we extend these methods to targets composed of features much denser than the conventional Rayleigh resolution criterion. For these applications, a new approach is presented that uses a combination of zero-order optical response and edge-based imaging. The approach is, however, more general and a more comprehensive set of analyses using theoretical methods is presented. This analysis gives a direct measure of the ultimate size and density of features that can be measured with these optical techniques. We present both experimental results and optical simulations using different electromagnetic scattering packages to evaluate the ultimate sensitivity and extensibility of these techniques.