Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices.

New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.

Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.

Freestanding oxide membranes provide a promising path for integrating devices on silicon and flexible platforms. To ensure optimal device performance, these membranes must be of high crystal quality, stoichiometric, and their morphology free from cracks and wrinkles. Often, layers transferred on substrates show wrinkles and cracks due to a lattice relaxation from an epitaxial mismatch. Doping the sacrificial layer of Sr3 Al2 O6 (SAO) with Ca or Ba offers a promising solution to overcome these challenges, yet its effects remain critically underexplored. A systematic study of doping Ca into SAO is presented, optimizing the pulsed laser deposition (PLD) conditions, and adjusting the supporting polymer type and thickness, demonstrating that strain engineering can effectively eliminate these imperfections. Using SrTiO3 as a case study, it is found that Ca1.5 Sr1.5 Al2 O6 offers a near-perfect match and a defect-free freestanding membrane. This approach, using the water-soluble Bax /Cax Sr3-x Al2 O6 family, paves the way for producing high-quality, large freestanding membranes for functional oxide devices.

Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions.

Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin of the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, n, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge, ne, transferred by the nth-order tunneling process. The measurements suggest PAT as a powerful method for assigning the origin of low-energy spectral features in hybrid Josephson devices.

A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO3/SrTiO3 Micromembranes.

Freestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO3/SrTiO3 (LAO/STO) membranes by spalling of strained heterostructures. Here, we first develop a scheme for the high-yield fabrication of membrane devices on silicon. Second, we show that the membranes exhibit metallic conductivity and a superconducting phase below ∼200 mK. Using anisotropic magnetotransport we extract the superconducting phase coherence length ξ ≈ 36-80 nm and establish an upper bound on the thickness of the superconducting electron gas d ≈ 17-33 nm, thus confirming its two-dimensional character. Finally, we show that the critical current can be modulated using a silicon-based backgate. The ability to form superconducting nanostructures of LAO/STO membranes, with electronic properties similar to those of the bulk counterpart, opens opportunities for integrating oxide nanoelectronics with silicon-based architectures.

Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires.

We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.

Superconducting vanadium/indium-arsenide hybrid nanowires.

We report MBE synthesis of InAs/vanadium hybrid nanowires. The vanadium was deposited without breaking ultra-high vacuum after InAs nanowire growth, minimizing any effect of oxidation and contamination at the interface between the two materials. We investigated four different substrate temperatures during vanadium deposition, ranging from -150 °C to 250 °C. The structural relation between vanadium and InAs depended on the deposition temperature. The three lower temperature depositions gave vanadium shells with a polycrystalline, granular morphology and the highest temperature resulted in vanadium reacting with the InAs nanowire. We fabricated electronic devices from the hybrid nanowires and obtained a high out-of-plane critical magnetic field, exceeding the bulk value for vanadium. However, size effects arising from the nanoscale grains resulted in the absence of a well-defined critical temperature, as well as device-to-device variation in the resistivity versus temperature dependence during the transition to the superconducting state.

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO_{3}.

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO_{3} provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO_{3} heterointerface based on the modulation-doped amorphous-LaAlO_{3}/SrTiO_{3} heterostructure, which exhibits both high electron mobility exceeding 10,000 cm^{2}/V s and low carrier density on the order of ∼10^{12} cm^{-2}. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional sub-bands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

A triptycene-based approach to solubilising carbon nanotubes and C60.

We describe herein the synthesis of a triptycene-based surfactant designed with the ability to solubilise single-walled carbon nanotubes (SWNTs) and C(60) in water through non-covalent interactions. Furthermore, an amphiphilic naphthalene-based surfactant with the same ability to solubilise SWNTs and C(60) has also been prepared. The compounds synthesised were designed with either two ionic or non-ionic tails to ensure a large number of supramolecular interactions with the solvent, thereby promoting strong solubilisation. The surfactants produced stable suspensions in which the SWNTs are dispersed and the surfactant/SWNT complexes formed are stable for more than one year. UV/Vis/NIR absorption spectroscopy, TEM and AFM were employed to probe the solubilisation properties of the dispersion of surfactants and SWNTs in water.

Tolerance of the widespread cyanobacterium Nostoc commune to extreme temperature variations (-269 to 105°C), pH and salt stress.

Nostoc commune is a widespread colonial cyanobacterium living on bare soils that alternate between frost and thaw, drought and inundation and very low and high temperatures. We collected N. commune from alternating wet and dry limestone pavements in Sweden and tested its photosynthesis and respiration at 20°C after exposure to variations in temperature (-269 to 105°C), pH (2-10) and NaCl (0.02-50 g NaCl kg(-1)). We found that dry field samples and rewetted specimens tolerated exposure beyond that experienced in natural environmental conditions: -269 to 70°C, pH 3-10 and 0-20 g NaCl kg(-1), with only a modest reduction of respiration, photosynthesis and active carbon uptake at 20°C. (14)CO(2) uptake from air declined markedly below zero and above 55°C, but remained positive. Specimens maintained a high metabolism with daily exposure to 6 h of rehydration and 18 h of desiccation at -18 and 20°C, but died at 40°C. The field temperature never exceeded the critical 40°C threshold during the wet periods, but it frequently exceeded this temperature during dry periods when N. commune is already dry and unaffected. We conclude that N. commune has an excellent tolerance to low temperatures, long-term desiccation and recurring cycles of desiccation and rewetting. These traits explain why it is the pioneer species in extremely harsh, nutrient-poor and alternating wet and dry environments.

Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids.

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.

Diluted Oxide Interfaces with Tunable Ground States.

The metallic interface between two oxide insulators, such as LaAlO3 /SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1- x Mnx O3 /STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm-2 , where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1- x Mnx O3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm-2 < ns ≤ 1.1 × 1013 cm-2 ) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.

Charge trapping in carbon nanotube loops demonstrated by electrostatic force microscopy.

Electronic devices made from carbon nanotubes (CNTs) can be greatly affected by substrate charges, which, for instance, induce strong hysteresis in CNT field effect transistors. In this work, electrostatic force microscopy (EFM) is employed to investigate single-walled nanotubes grown by chemical vapor deposition on SiO2 substrates. We demonstrate the use of this technique to gain quantitative information on the substrate charges. It is found that charge pools with densities around 10(-8) C/cm2 can be trapped inside nanotube loops for extended periods of time, showing that nanotubes can act as confining barriers for substrate charges. The trapped charges can be removed by scanning probe manipulation.