Novel lncRNA 803 related to Marek's disease inhibits apoptosis of DF-1 cells.

Marek's disease (MD) is a neoplastic disease that significantly affects the poultry industry. Long non-coding RNAs (lncRNAs) are crucial regulatory factors in various biological processes, including tumourigenesis. However, the involvement of novel lncRNAs in the course of MD virus (MDV) infection is still underexplored. Here, we present the first comprehensive characterization of differentially expressed lncRNAs in chicken spleen at different stages of MDV infection. A series of differentially expressed lncRNAs was identified at each stage of MDV infection through screening. Notably, our investigation revealed a novel lncRNA, lncRNA 803, which exhibited significant differential expression at different stages of MDV infection and was likely to be associated with the p53 pathway. Further analyses demonstrated that the overexpression of lncRNA 803 positively regulated the expression of p53 and TP53BP1 in DF-1 cells, leading to the inhibition of apoptosis. This is the first study to focus on the lncRNA expression profiles in chicken spleens during MDV pathogenesis. Our findings highlight the potential role of the p53-related novel lncRNA 803 in MD pathogenesis and provide valuable insights for decoding the molecular mechanism of MD pathogenesis involving non-coding RNA.RESEARCH HIGHLIGHTS Differentially expressed lncRNAs in spleens of chickens infected with Marek's disease virus at different stages were identified for the first time.The effects of novel lncRNA 803 on p53 pathway and apoptosis of DF-1 cells were reported for the first time.

Investigation on strain relaxation distribution in GaN-based µLEDs by Kelvin probe force microscopy and micro-photoluminescence.

GaN/InGaN multi-quantum-wells (MQWs) micron light emitting diodes (µLEDs) with the size ranging from 10 to 300 µm are fabricated. Effects of strain relaxation on the performance of µLEDs have been investigated both experimentally and numerically. Kelvin probe force microscopy (KPFM) and micro-photoluminescence (µPL) are used to characterize the strained area on micron pillars. Strain relaxation and reducing polarization field in MQWs almost affects the whole mesa for 10 µm LEDs and about 4% area around the lateral for 300 µm LEDs. It makes a great contribution to high performance for smaller size µLEDs. Moreover, an indirect nanoscale strain measurement for µLEDs are provided.

Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED.

The metallic-structure dependent localized surface plasmons (LSPs) coupling behaviors with InGaN QWs in a green LED epitaxial wafer are investigated by optical transmission, scanning electron microscopy (SEM) and photoluminescence (PL) measurements. Ag nanoparticles (NPs) are formed by thermal annealing Ag layer on the green LED wafer. SEM images show that for higher annealing temperature and/or thicker deposited Ag layer, larger Ag NPs can be produced, leading to the redshift of absorption peaks in the transmission spectra. Time resolved PL (TRPL) measurements indicate when LSP-MQW coupling occurs, PL decay rate is greatly enhanced especially at the resonant wavelength 560 nm. However, the PL intensity is suppressed by 3.5 folds compared to the bare LED. The resonant absorption and PL suppression are simulated by three dimension finite-difference-time-domain (FDTD), which suggests that Ag particle with smaller size and lower height lead to the larger dissipation of LSP.

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays.

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.