In-Situ Cyclized Polyacrylonitrile as an Electron Selective Layer for n-i-p Perovskite Solar Cell with Enhanced Efficiency and Stability.

In situ cyclized polyacrylonitrile (CPAN) is developed to replace n-type metal oxide semiconductors (TiO2 or SnO2) as an electron selective layer (ESL) for highly efficient and stable n-i-p perovskite solar cells (PSCs). The CPAN layer is fabricated via facile in situ cyclization reaction of polyacrylonitrile (PAN) coated on a conducting glass substrate. The CPAN layer is robust and insoluble in common solvents, and possesses n-type semiconductor properties with a high electron mobility of 4.13×10-3 cm2 V-1 s-1. With the CPAN as an ESL, the PSC affords a power conversion efficiency (PCE) of 23.12 %, which is the highest for the n-i-p PSCs with organic ESLs. Moreover, the device with the CPAN layer holds superior operational stability, maintaining over 90 % of their initial efficiency after 500 h continuous light soaking. These results confirm that the CPAN layer would be a desirable low-cost and efficient ESL for n-i-p PSCs and other photoelectronic devices with high performance and stability.

Vacuum-Assisted Thermal Annealing of CsPbI3 for Highly Stable and Efficient Inorganic Perovskite Solar Cells.

Inorganic cesium lead iodide perovskite CsPbI3 is attracting great attention as a light absorber for single or multi-junction photovoltaics due to its outstanding thermal stability and proper band gap. However, the device performance of CsPbI3 -based perovskite solar cells (PSCs) is limited by the unsatisfactory crystal quality and thus severe non-radiative recombination. Here, vacuum-assisted thermal annealing (VATA) is demonstrated as an effective approach for controlling the morphology and crystallinity of the CsPbI3 perovskite films formed from the precursors of PbI2 , CsI, and dimethylammonium iodide (DMAI). By this method, a large-area and high-quality CsPbI3 film is obtained, exhibiting a much reduced trap-state density with prolonged charge lifetime. Consequently, the solar cell efficiency is raised from 17.26 to 20.06 %, along with enhanced stability. The VATA would be an effective approach for fabricating high-performance thin-film CsPbI3 perovskite optoelectronics.

Facile Dimension Transformation Strategy for Fabrication of Efficient and Stable CsPbI3 Perovskite Solar Cells.

All-inorganic cesium lead triiodide (CsPbI3) perovskite has received increasing attention due to its intrinsic thermal stability and suitable band gap for photovoltaic applications. However, it is difficult to deposit high-quality pure-phase CsPbI3 films using CsI and PbI2 as precursors due to the rapid nucleation and crystal growth by the solution coating method. Here, a simple cation-exchange approach is employed to fabricate all-inorganic 3D CsPbI3 perovskite, where 1D ethylammonium lead (EAPbI3) perovskite is first solution-deposited and then transformed to 3D CsPbI3 via ion exchange between EA+ and Cs+ during thermal annealing. The large space between the PbI3- skeletons in 1D EAPbI3 favors the cation interdiffusion and exchange for the formation of pure-phase 3D CsPbI3 with full compactness and high crystallinity and orientation. The resulting CsPbI3 film exhibits a low trap density of state and high charge mobility, and the perovskite solar cell shows a power-conversion efficiency of 18.2% with enhanced stability. This strategy provides an alternative and promising fabrication route for the fabrication of high-quality all-inorganic perovskite devices.