Nitrogen Dioxide Sensing Using Multilayer Structure of Reduced Graphene Oxide and α-Fe2O3.

Multilayers consisting of graphene oxide (GO) and α-Fe2O3 thin layers were deposited on the ceramic substrates by the spray LbL (layer by layer) coating technique. Graphene oxide was prepared from graphite using the modified Hummers method. Obtained GO flakes reached up to 6 nanometers in thickness and 10 micrometers in lateral size. Iron oxide Fe2O3 was obtained by the wet chemical method from FeCl3 and NH4OH solution. Manufactured samples were deposited as 3 LbL (GO and Fe2O3 layers deposited sequentially) and 6 LbL structures with GO as a bottom layer. Electrical measurements show the decrease of multilayer resistance after the introduction of the oxidizing NO2 gas to the ambient air atmosphere. The concentration of NO2 was changed from 1 ppm to 20 ppm. The samples changed their resistance even at temperatures close to room temperature, however, the sensitivity increased with temperature. Fe2O3 is known as an n-type semiconductor, but the rGO/Fe2O3 hybrid structure behaved similarly to rGO, which is p-type. Both chemisorbed O2 and NO2 act as electron traps decreasing the concentration of electrons and increasing the effective multilayer conductivity. An explanation of the observed variations of multilayer structure resistance also the possibility of heterojunctions formation was taken into account.

XMCD studies of magnetic polarization at Mo atoms in CoMo alloy and magnetically coupled Co/Mo multilayers.

Magnetic polarization of Mo atoms in Co96Mo4 alloy film and Co/Mo multilayered structures has been studied by X-ray magnetic circular dichroism. Samples with Mo spacers of two different thicknesses (0.9 nm and 1.8 nm) were investigated. Mo atoms receive a magnetic moment of -0.21µB in the alloy. In the multilayer with the thinner Mo spacer (dMo = 0.9 nm) the magnetic moment is much smaller (-0.03µB). In both cases the measured induced moment at the Mo site is oriented antiparallel to the moment at the Co atoms. The presence of the induced moment in the Mo spacer coincides with antiferromagnetic coupling between the Co component slabs. In contrast, neither measurable induced moment at the Mo site nor interlayer coupling between the Co layers has been found for the multilayer with the thicker Mo spacer. Possible mechanisms of the coupling associated with the induced moment are discussed in detail.

High-Entropy Perovskite Thin Film in the Gd-Nd-Sm-La-Y-Co System: Deposition, Structure and Optoelectronic Properties.

Multicomponent equimolar perovskite oxides (ME-POs) have recently emerged as a highly promising class of materials with unique synergistic effects, making them well-suited for applications in such areas as photovoltaics and micro- and nanoelectronics. High-entropy perovskite oxide thin film in the (Gd0.2Nd0.2La0.2Sm0.2Y0.2)CoO3 (RECO, where RE = Gd0.2Nd0.2La0.2Sm0.2Y0.2, C = Co, and O = O3) system was synthesized via pulsed laser deposition. The crystalline growth in an amorphous fused quartz substrate and single-phase composition of the synthesized film was confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Surface conductivity and activation energy were determined using a novel technique implementing atomic force microscopy (AFM) in combination with current mapping. The optoelectronic properties of the deposited RECO thin film were characterized using UV/VIS spectroscopy. The energy gap and nature of optical transitions were calculated using the Inverse Logarithmic Derivative (ILD) and four-point resistance method, suggesting direct allowed transitions with altered dispersions. The narrow energy gap of RECO, along with its relatively high absorption properties in the visible spectrum, positions it as a promising candidate for further exploration in the domains of low-energy infrared optics and electrocatalysis.

Investigation of Dye Dopant Influence on Electrooptical and Morphology Properties of Polymeric Acceptor Matrix Dedicated for Ternary Organic Solar Cells.

The publication presents the results of investigations of the influence of dye dopant on the electrooptical and morphology properties of a polymeric donor:acceptor mixture. Ternary thin films (polymer:dye:fullerene) were investigated for potential application as an active layer in organic solar cells. The aim of the research is to determine the effect of selected dye materials (dye D131, dye D149, dye D205, dye D358) on the three-component layer and their potential usefulness as an additional donor in ternary cells, based on P3HT donor and PC71BM acceptor. UV-vis spectroscopy studies were performed, and absorption and luminescence spectra were determined. Ellipsometry parameters for single dye and ternary layers have been measured. The analyses were performed using the Raman spectroscopy method, and the Raman spectra of the mixtures and single components have been determined. Organic layers were prepared and studied using scanning electron microscope and atomic force microscope. For dyes, ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy studies were carried out and the ternary system was presented and analyzed in terms of energy bands.

Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in a Wide Range of Heavy-Metal Thickness.

The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal-conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano-oscillators, or bioinspired neuromorphic computations. We study the interface properties, magnetization dynamics, magnetostatic features, and spin-orbit interactions within the multilayer system Ti(2)/Co(1)/Pt(0-4)/Co(1)/MgO(2)/Ti(2) (thicknesses in nanometers) patterned by optical lithography on micrometer-sized bars. In the investigated devices, Pt is used as a source of the spin current and as a nonmagnetic spacer with variable thickness, which enables the magnitude of the interlayer ferromagnetic exchange coupling to be effectively tuned. We also find the Pt thickness-dependent changes in magnetic anisotropies, magnetoresistances, effective Hall angles, and, eventually, spin-orbit torque fields at interfaces. The experimental findings are supported by the relevant interface structure-related simulations, micromagnetic, macrospin, as well as the spin drift-diffusion models. Finally, the contribution of the spin-orbital Edelstein-Rashba interfacial fields is also briefly discussed in the analysis.

Surface-Step-Induced Magnetic Anisotropy in Epitaxial LSMO Deposited on Engineered STO Surfaces.

Changes in stoichiometry, temperature, strain and other parameters dramatically alter properties of LSMO perovskite. Thus, the sensitivity of LSMO may enable control of the magnetic properties of the film. This work demonstrates the capabilities of interface engineering to achieve the desired effects. Three methods of preparing STO substrates were conducted, i.e., using acid, buffer solution, and deionized water. The occurrence of terraces and their morphology depend on the preparation treatment. Terraces propagate on deposited layers and influence LSMO properties. The measurements show that anisotropy depends on the roughness of the substrate, the method of preparing the substrate, and oxygen treatment. The collected results suggest that the dipolar mechanism may be the source of LSMO anisotropy.

Optimization of spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers.

We present experimental data and their theoretical description on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in five different bilayer systems: [Formula: see text], [Formula: see text], [Formula: see text], W/Co, and Co/Pt. The devices used for experiments have different interfacial properties due to either amorphous or crystalline structures of constitutent layers. To determine magnetoresistance contributions and to allow for optimization, the AMR is explicitly included in the diffusion transport equations in the ferromagnets. The results allow determination of different contributions to the magnetoresistance, which can play an important role in optimizing prospective magnetic stray field sensors. They also may be useful in the determination of spin transport properties of metallic magnetic heterostructures in other experiments based on magnetoresistance measurements.

Publisher Correction: Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures.

A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.

Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures.

When a current is passed through a non-magnetic metal with strong spin-orbit coupling, an orthogonal spin current is generated. This spin current can be used to switch the magnetization of an adjacent ferromagnetic layer or drive its magnetization into continuous precession. The interface, which is not necessarily sharp, and the crystallographic structure of the nonmagnetic metal can both affect the strength of current-induced spin-orbit torques. Here, we investigate the effects of interface intermixing and film microstructure on spin-orbit torques in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with different Ta layer thickness (5 nm, 10 nm, 15 nm), greater than the spin diffusion length. Effective spin-orbit torques are determined from harmonic Hall voltage measurements performed at temperatures ranging from 20 K to 300 K. We account for the temperature dependence of damping-like and field-like torques by including an additional contribution from the Ta/CoFeB interface in the spin diffusion model. Using this approach, the temperature variations of the spin Hall angle in the Ta underlayer and at the Ta/CoFeB interface are determined separately. Our results indicate an almost temperature-independent spin Hall angle of [Formula: see text] in Ta and a strongly temperature-dependent [Formula: see text] for the intermixed Ta/CoFeB interface.