Engineering covalently bonded 2D layered materials by self-intercalation.

Two-dimensional (2D) materials1-5 offer a unique platform from which to explore the physics of topology and many-body phenomena. New properties can be generated by filling the van der Waals gap of 2D materials with intercalants6,7; however, post-growth intercalation has usually been limited to alkali metals8-10. Here we show that the self-intercalation of native atoms11,12 into bilayer transition metal dichalcogenides during growth generates a class of ultrathin, covalently bonded materials, which we name ic-2D. The stoichiometry of these materials is defined by periodic occupancy patterns of the octahedral vacancy sites in the van der Waals gap, and their properties can be tuned by varying the coverage and the spatial arrangement of the filled sites7,13. By performing growth under high metal chemical potential14,15 we can access a range of tantalum-intercalated TaS(Se)y, including 25% Ta-intercalated Ta9S16, 33.3% Ta-intercalated Ta7S12, 50% Ta-intercalated Ta10S16, 66.7% Ta-intercalated Ta8Se12 (which forms a Kagome lattice) and 100% Ta-intercalated Ta9Se12. Ferromagnetic order was detected in some of these intercalated phases. We also demonstrate that self-intercalated V11S16, In11Se16 and FexTey can be grown under metal-rich conditions. Our work establishes self-intercalation as an approach through which to grow a new class of 2D materials with stoichiometry- or composition-dependent properties.

Atomically Engineered Encapsulation of SnS2 Nanoribbons by Single-Walled Carbon Nanotubes for High-Efficiency Lithium Storage.

Rechargeable lithium-ion batteries are integral to contemporary energy storage, yet current anode material systems struggle to meet the increasing demand for extended range capabilities. This work introduces a novel composite anode material composed of one-dimensional 2H-phase tin disulfide (SnS2) nanoribbons enclosed within cavities of single-walled carbon nanotubes (SnS2@SWCNTs), achieved through precise atomic engineering. Employing aberration-corrected transmission electron microscopy, we precisely elucidated the crystal structure of SnS2 within the confines of the SWCNTs. This deliberate design effectively addresses the inherent limitations of SnS2 as a lithium-ion anode material, including its low electrical conductivity, considerable volume expansion effects, and unstable solid electrolyte interface membrane. Testing confirmed that SnS2 transforms into the Li5Sn2 alloy phase after full lithiation and back to SnS2 after delithiation, showing excellent reversibility. The composite also benefits from edge effects, improving lithium storage through stronger binding and lower migration barriers, which were supported by calculations. This pioneering work advances high-performance anode materials for applications.

Interlayer Charge Transfer Induced Electrical Behavior Transition in 1D AgI@sSWCNT van der Waals Heterostructures.

The emergence of one-dimensional van der Waals heterostructures (1D vdWHs) opens up potential fields with unique properties, but precise synthesis remains a challenge. The utilization of mixed conductive types of carbon nanotubes as templates has imposed restrictions on the investigation of the electrical behavior and interlayer interaction of 1D vdWHs. In this study, we efficiently encapsulated silver iodide in high-purity semiconducting single-walled carbon nanotubes (sSWCNTs), forming 1D AgI@sSWCNT vdWHs. We characterized the semiconductor-metal transition and increased the carrier concentration of individual AgI@sSWCNTs via sensitive dielectric force microscopy and confirmed the results through electrical device tests. The electrical behavior transition was attributed to an interlayer charge transfer, as demonstrated by Kelvin probe force microscopy. Furthermore, we showed that this method of synthesizing 1D heterostructures can be extended to other metal halides. This work opens the door for the further exploration of the electrical properties of 1D vdWHs.

One-Dimensional High-Entropy Compounds.

One-dimensional (1D) high-entropy compounds (HECs) with subnano diameters are highly attractive because long-range electron delocalization may occur along the high-entropy atomic chain, which results in extraordinary properties. Nevertheless, synthesizing such 1D HECs presents a substantial challenge, and the physicochemical attributes of these novel structures remain ambiguous. Herein, we developed a comelting-filling-freezing-modification (co-MFFM) method for synthesizing 1D high-entropy metal phosphide (HEP) by simultaneously encapsulating various metal cations within single-walled carbon nanotubes (SWCNTs) followed with a phosphorization process. The resulting 1D HEP nanowires confined within SWCNTs exhibit crucial features, including an ultrafine, high-entropy, and amorphous structure, along with a core-shell arrangement. The SWCNT as a shell could donate π electrons to 1D HEP for enhanced electron delocalization and protect 1D HEP as an atomically single-layered protective covering, thus boosting high electrocatalytic activity and stability. Moreover, the co-MFFM method demonstrates scalability for mass production and displays universal applicability to the synthesis of various 1D HECs.

Interfacial Electron Transfer in PbI2@Single-Walled Carbon Nanotube van der Waals Heterostructures for High-Stability Self-Powered Photodetectors.

Acquiring a deep insight into the electron transfer mechanism and applications of one-dimensional (1D) van der Waals heterostructures (vdWHs) has always been a significant challenge. Herein, through direct observation using aberration-corrected transmission electron microscopy (AC-TEM), we verify the stable formation of a high-quality 1D heterostructure composed of PbI2@single-walled carbon nanotubes (SWCNTs). The phenomenon of electron transfer between PbI2 and SWCNT is elucidated through spectroscopic investigations, including Raman and X-ray photoelectron spectroscopy (XPS). Electrochemical testing indicates the electron transfer and enduring stability of 1D PbI2 within SWCNTs. Moreover, leveraging the aforementioned electron transfer mechanism, we engineer self-powered photodetectors that exhibit exceptional photocurrent and a 3-order-of-magnitude switching ratio. Subsequently, we reveal its unique electron transfer behavior using Kelvin probe force microscopic (KPFM) tests. According to KPFM, the average surface potential of SWCNTs decreases by 80.6 mV after filling. Theoretical calculations illustrate a charge transfer of 0.02 e per unit cell. This work provides an effective strategy for the in-depth investigation and application of electron transfer in 1D vdWHs.

Molecular Doping Modulation and Applications of Structure-Sorted Single-Walled Carbon Nanotubes: A Review.

Single-walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post-silicon electronics. Molecular doping, with its non-destructive and fine-tunable characteristics, is emerging as the primary doping approach for the structure-controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure-controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure-sorting strategies leads to significantly improved functionality of SWCNT-based field-effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.

Room-temperature logic-in-memory operations in single-metallofullerene devices.

In-memory computing provides an opportunity to meet the growing demands of large data-driven applications such as machine learning, by colocating logic operations and data storage. Despite being regarded as the ultimate solution for high-density integration and low-power manipulation, the use of spin or electric dipole at the single-molecule level to realize in-memory logic functions has yet to be realized at room temperature, due to their random orientation. Here, we demonstrate logic-in-memory operations, based on single electric dipole flipping in a two-terminal single-metallofullerene (Sc2C2@Cs(hept)-C88) device at room temperature. By applying a low voltage of ±0.8 V to the single-metallofullerene junction, we found that the digital information recorded among the different dipole states could be reversibly encoded in situ and stored. As a consequence, 14 types of Boolean logic operation were shown from a single-metallofullerene device. Density functional theory calculations reveal that the non-volatile memory behaviour comes from dipole reorientation of the [Sc2C2] group in the fullerene cage. This proof-of-concept represents a major step towards room-temperature electrically manipulated, low-power, two-terminal in-memory logic devices and a direction for in-memory computing using nanoelectronic devices.

Arrays of horizontal carbon nanotubes of controlled chirality grown using designed catalysts.

The semiconductor industry is increasingly of the view that Moore's law-which predicts the biennial doubling of the number of transistors per microprocessor chip-is nearing its end. Consequently, the pursuit of alternative semiconducting materials for nanoelectronic devices, including single-walled carbon nanotubes (SWNTs), continues. Arrays of horizontal nanotubes are particularly appealing for technological applications because they optimize current output. However, the direct growth of horizontal SWNT arrays with controlled chirality, that would enable the arrays to be adapted for a wider range of applications and ensure the uniformity of the fabricated devices, has not yet been achieved. Here we show that horizontal SWNT arrays with predicted chirality can be grown from the surfaces of solid carbide catalysts by controlling the symmetries of the active catalyst surface. We obtained horizontally aligned metallic SWNT arrays with an average density of more than 20 tubes per micrometre in which 90 per cent of the tubes had chiral indices of (12, 6), and semiconducting SWNT arrays with an average density of more than 10 tubes per micrometre in which 80 per cent of the nanotubes had chiral indices of (8, 4). The nanotubes were grown using uniform size Mo2C and WC solid catalysts. Thermodynamically, the SWNT was selectively nucleated by matching its structural symmetry and diameter with those of the catalyst. We grew nanotubes with chiral indices of (2m, m) (where m is a positive integer), the yield of which could be increased by raising the concentration of carbon to maximize the kinetic growth rate in the chemical vapour deposition process. Compared to previously reported methods, such as cloning, seeding and specific-structure-matching growth, our strategy of controlling the thermodynamics and kinetics offers more degrees of freedom, enabling the chirality of as-grown SWNTs in an array to be tuned, and can also be used to predict the growth conditions required to achieve the desired chiralities.

Fabrication of high-performance carbon nanotube/copper composite fibers by interface thiol-modification.

Carbon nanotube (CNT)/copper (Cu) composite fibers are placed great expectations as the next generation of light-weight, conductive wires. However, the electrical and mechanical performances still need to be enhanced. Herein, we demonstrate a strategy that is electrodeposition Cu on thiolated CNT fibers to solve the grand challenge which is enhancing the performance of CNT/Cu composite fibers. Thiol groups are introduced to the surface of the CNT fibers through a controllable O2plasma carboxylation process and amide reaction. Compared with CNT/Cu composite fibers, there are 82.7% and 29.6% improvements in electrical conductivity and tensile strength of interface thiol-modification composite fibers. The enhancement mechanism is also explored that thiolated CNT fibers could make strong interactions between Cu and CNT, enhancing the electrical and mechanical performance of CNT/Cu composites. This work proposes a convenient, heat-treatment-free strategy for high-performance CNT/Cu composite fibers, which can be manufactured for large-scale production and applied to next-generation conductive wires.

Chemical Vapor Deposition of Superconducting FeTe1-xSex Nanosheets.

FeTe1-xSex, a promising layered material used to realize Majorana zero modes, has attracted enormous attention in recent years. Pulsed laser deposition (PLD) and molecular-beam epitaxy (MBE) are the routine growth methods used to prepare FeTe1-xSex thin films. However, both methods require high-vacuum conditions and polished crystalline substrates, which hinder the exploration of the topological superconductivity and related nanodevices of this material. Here we demonstrate the growth of the ultrathin FeTe1-xSex superconductor by a facile, atmospheric pressure chemical vapor deposition (CVD) method. The composition and thickness of the two-dimensional (2D) FeTe1-xSex nanosheets are well controlled by tuning the experimental conditions. The as-prepared FeTe0.8Se0.2 nanosheet exhibits an onset superconducting transition temperature of 12.4 K, proving its high quality. Our work offers an effective strategy for preparing the ultrathin FeTe1-xSex superconductor, which could become a promising platform for further study of the unconventional superconductivity in the FeTe1-xSex system.

Machine Learning Driven Synthesis of Few-Layered WTe2 with Geometrical Control.

Reducing the lateral scale of two-dimensional (2D) materials to one-dimensional (1D) has attracted substantial research interest not only to achieve competitive electronic applications but also for the exploration of fundamental physical properties. Controllable synthesis of high-quality 1D nanoribbons (NRs) is thus highly desirable and essential for further study. Here, we report the implementation of supervised machine learning (ML) for the chemical vapor deposition (CVD) synthesis of high-quality quasi-1D few-layered WTe2 NRs. Feature importance analysis indicates that H2 gas flow rate has a profound influence on the formation of WTe2, and the source ratio governs the sample morphology. Notably, the growth mechanism of 1T' few-layered WTe2 NRs is further proposed, which provides new insights for the growth of intriguing 2D and 1D tellurides and may inspire the growth strategies for other 1D nanostructures. Our findings suggest the effectiveness and capability of ML in guiding the synthesis of 1D nanostructures, opening up new opportunities for intelligent materials development.

Two-step CVD synthesis of NiTe2-MoS2vertical junctions with improved MoS2transistors performance.

The primary challenge for widespread applications of two-dimensional electronics is to achieve satisfactory electrical contacts due to the difficulties in inevitable physical damages and selectively doping during traditional metal integration process. The two-dimensional (2D) metal-semiconductor junctions have attracted captivated attention for potential applications in future atomically thin electronics as perfect candidates for achieving reliable electrical contacts. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions which the upper NiTe2 selectively nucleate at the edge of underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirm that NiTe2-MoS2 metal-semiconductor vertical junctions are successfully synthesized. Electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) show higher field-effect mobilities (µFE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistors performance with metal-semiconductor junctions.

Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance.

The primary challenge for the widespread application of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during the traditional metal integration process, difficulties arise due to inevitable physical damage and selective doping. Two-dimensional metal-semiconductor junctions have attracted attention for the potential application to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions where the upper NiTe2 selectively nucleates at the edge of the underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirmed that NiTe2-MoS2 metal-semiconductor vertical junctions had been successfully synthesized. The electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) showed higher field-effect mobilities (µ FE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistor performance with metal-semiconductor junctions.

Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity.

Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Low-temperature transport data reveal an enhanced superconducting transition temperature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.

A Tandem 0D/2D/2D NbS2 Quantum Dot/Nb2 O5 Nanosheet/g-C3 N4 Flake System with Spatial Charge-Transfer Cascades for Boosting Photocatalytic Hydrogen Evolution.

The relatively high recombination rate of charges remains the most critical limiting factor for solar-driven water splitting for hydrogen generation. Herein, a tandem 0D/2D/2D NbS2 quantum dot/Nb2 O5 nanosheet/g-C3 N4 flake (NSNOCN) system is designed. Owing to the unique spatial-arrangement and elaborate morphology of 0D NbS2 , 2D Nb2 O5 , and 2D g-C3 N4 in the newly designed NSNOCN, plenty of spatial charge-transfer cascades from g-C3 N4 to NbS2 via Nb2 O5 are formed to accelerate separation and transfer of charges significantly, thus contributing to a high photocatalytic H2 generation rate of 13.99 mmol h-1 g-1 (an apparent quantum efficiency of 10.8% at 420 nm), up to 107.6 and 43.7 times by contrast with that of g-C3 N4 and Nb2 O5 , respectively. This work can provide a new platform in the design of artificial photocatalytic systems with high charge-transfer efficiency.

Flexible and High-Voltage Coaxial-Fiber Aqueous Rechargeable Zinc-Ion Battery.

Extensive efforts have been devoted to construct a fiber-shaped energy-storage device to fulfill the increasing demand for power consumption of textile-based wearable electronics. Despite the myriad of available material selections and device architectures, it is still fundamentally challenging to develop eco-friendly fiber-shaped aqueous rechargeable batteries (FARBs) on a single-fiber architecture with high energy density and long-term stability. Here, we demonstrate flexible and high-voltage coaxial-fiber aqueous rechargeable zinc-ion batteries (CARZIBs). By utilizing a novel spherical zinc hexacyanoferrate with prominent electrochemical performance as cathode material, the assembled CARZIB offers a large capacity of 100.2 mAh cm-3 and a high energy density of 195.39 mWh cm-3, outperforming the state-of-the-art FARBs. Moreover, the resulting CARZIB delivers outstanding flexibility with the capacity retention of 93.2% after bending 3000 times. Last, high operating voltage and output current are achieved by the serial and parallel connection of CARZIBs woven into the flexible textile to power high-energy-consuming devices. Thus, this work provides proof-of-concept design for next-generation wearable energy-storage devices.

Selective Growth of Subnanometer Diameter Single-Walled Carbon Nanotube Arrays in Hydrogen-Free CVD.

Small diameter single-walled carbon nanotube (SWNT) arrays with larger bandgap are more desirable as near-infrared optical absorbers for the fabrication of high performance photovoltaic and photodetector devices. We report herein a rational approach to selective growth of well-aligned subnanometer diameter (∼84% between 0.75 and 0.95 nm) SWNT arrays with a density of 0.3-0.5 tubes/µm on quartz surfaces using solid Mo2C catalysts for short-time growth by low carbon feeding in hydrogen-free CVD. These subnanometer diameter SWNTs have a narrow chirality distribution (the ratio of (8,4), (8,5) and (7,6) is higher than 73%). During nanotube growth, only small size Mo nanoparticles are carbonized into stable Mo2C for catalyzing the growth of SWNTs through low carbon feeding rate over short time in the hydrogen-free environment, whereas larger catalysts are inactive due to underfeeding. Meanwhile, solid Mo2C catalysts are effective in reducing the chirality distributions of the as-grown SWNTs. Additionally, combining an annealing process after loading catalyst on the sapphire substrates, the average density is increased to ∼15 tubes/µm while maintaining small diameter and narrow chirality distribution. Our results offer more choices for structurally controlled growth of aligned-SWNTs, with potential applications in nanoelectronics.

Growth of Horizontal Semiconducting SWNT Arrays with Density Higher than 100 tubes/µm using Ethanol/Methane Chemical Vapor Deposition.

Horizontally aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays with a certain density are highly desirable for future electronic devices. However, obtaining s-SWNT arrays with simultaneously high purity and high density is extremely challenging. We report herein a rational approach, using ethanol/methane chemical vapor deposition, to grow SWNT arrays with a s-SWNT ratio over 91% and a density higher than 100 tubes/µm. In this approach, at a certain temperature, ethanol was fully thermally decomposed to feed carbon atoms for Trojan-Mo catalysts growing high density SWNT arrays, while the incomplete pyrolysis of methane provided appropriate active H radicals with the help of catalytic sapphire surface to inhibit metallic SWNT (m-SWNT) growth. The synergistic effect of ethanol/methane mixtures resulted in enriched semiconducting SWNTs and no obvious decrease in nanotube density due to their milder reactivity and higher controllability at suitable growth conditions. This work represents a step forward in large-area synthesis of high density s-SWNT arrays on substrates and demonstrates potential applications in scalable carbon nanotube electronics.

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity.

Growth of close-packed semiconducting single-walled carbon nanotube arrays using oxygen-deficient TiO2 nanoparticles as catalysts.

For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, techniques to obtain horizontally aligned semiconducting SWNTs (s-SWNTs) with higher densities are still in their infancy. We reported herein a rational approach for the preferential growth of densely packed and well-aligned s-SWNTs arrays using oxygen-deficient TiO2 nanoparticles as catalysts. Using this approach, a suitable concentration of oxygen vacancies in TiO2 nanoparticles could form by optimizing the flow rate of hydrogen and carbon sources during the process of SWNT growth, and then horizontally aligned SWNTs with the density of ∼ 10 tubes/µm and the s-SWNT percentage above 95% were successfully obtained on ST-cut quartz substrates. Theoretical calculations indicated that TiO2 nanoparticles with a certain concentration of oxygen vacancies have a lower formation energy between s-SWNT than metallic SWNT (m-SWNT), thus realizing the preferential growth of s-SWNT arrays. Furthermore, this method can also be extended to other semiconductor oxide nanoparticles (i.e., ZnO, ZrO2 and Cr2O3) for the selective growth of s-SWNTs, showing clear potential to the future applications in nanoelectronics.