Detalhe da pesquisa
1.
Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study.
Micromachines (Basel)
; 14(6)2023 May 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-37374686