Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering.

Vertical gate-all-around (V-GAA) represents the ultimate configuration in the forthcoming transistor industry, but it still encounters challenges in the semiconductor community. This paper introduces, for the first time, a dual-input logic gate circuit achieved using 3D vertical transistors with nanoscale sub-20-nm GAA, employing a novel technique for creating contacts and patterning metallic lines at the bottom level without the conventional lift-off process. This involves a two-step oxidation process: patterning the first field oxide to form bottom metal lines and then creating the gate oxide layer on nanowires (NWs), followed by selective removal from the top and bottom of the nanostructures. VGAA-NW transistors, fabricated using the lift-off-free approach, exhibit improved yield and reduced access resistance, leading to an enhanced drive current while maintaining good immunity against short-channel effects. Finally, elementary two-input logic gates within a single cell, using VNW transistors, demonstrate novel possibilities in advanced logic circuitry design and routing options in 3D.

GaAs membrane PhC lasers threshold reduction using AlGaAs barriers and improved processing.

Active suspended membranes are an ideal test-bench for experimenting with novel laser geometries and principles. We show that adding thin AlGaAs barrier near the top and bottom Air/GaAs interfaces of the membrane significantly reduces the carriers non-radiative recombinations and decreases the threshold of test photonic crystal test lasers. We review the existing literature on photonic crystal membrane fabrication and propose an overview of the significant defects that can be induced by each fabrication step. Finally we propose a complete processing scheme that overcome most of these defects.

Transient Response of Miniature Piezoresistive Pressure Sensor Dedicated to Blast Wave Monitoring.

Blast waves generated by energetic materials involve very fast time variations in the pressure. One important issue for blast wave metrology is the accurate measurement (typical precision in the range of ±5% or better) of the static overpressure peak. For most near field configurations, this measurement requires ultra-fast sensors with response times lower than a few microseconds. In this paper, we design, model, fabricate and characterize a new ultra-fast sensor using piezo-resistive gauges at the center of a miniaturized and rectangular silicon membrane. When a pressure step of 10 bar is applied to the membrane, the signal delivered to the sensor output presents dampened oscillations, with a resonant frequency of 20.6 MHz and quality factor of 24,700 ns after the arrival of the shock wave. After removing undesirable drifts that appear after 700 ns, we may expect the sensor to have a response time (at ±5%) of 1.2 µs. Consequently, the proposed pressure sensor could be advantageously used for the accurate measurement of static overpressure peaks in blast wave experiments.

Microelectromechanical Transducer to Monitor High-Doses of Nuclear Irradiation.

This paper reports the design, fabrication and measured performance of a passive microelectromechanical transducer for the wireless monitoring of high irradiation doses in nuclear environments. The sensing device is composed of a polymer material (high-density polyethylene) sealed inside a cavity. Subjected to ionizing radiation, this material releases various gases, which increases the pressure inside the cavity and deflects a dielectric membrane. From the measurement of the deflection, the variation of the applied pressure can be estimated, and, in turn, the dose may be determined. The microelectromechanical structure can also be used to study and validate the radiolysis properties of the polymer through its gas emission yield factor. Measurement of the dielectric membrane deflection is performed here to validate on the one hand the required airtightness of the cavity exposed to doses about 4 MGy and on the other hand, the functionality of the fabricated dosimeter for doses up to 80 kGy. The selection of appropriate materials for the microelectromechanical device is discussed, and the outgassing properties of the selected high-density polyethylene are analysed. Moreover, the technological fabrication process of the transducer is detailed.

Enhancement of electric and magnetic dipole transition of rare-earth-doped thin films tailored by high-index dielectric nanostructures.

We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.

Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds.

GaAs nanowires are promising candidates for emerging devices in a broad field of applications (e.g., nanoelectronics, photodetection, or photoconversion). These nanostructures benefit greatly from a vertical integration, as it allows for the exhibition of the entire nanowire surface. However, one of the main challenges related to vertical integration is the conception of an efficient method to create low resistive contacts at nanoscale without degrading the device performance. In this article, we propose a complementary metal-oxide-semiconductor (CMOS)-compatible approach to form alloyed contacts at the extremities of vertical GaAs nanowires. Ni-based and Pd-based alloys on different vertical GaAs nanostructures have been characterized by structural and chemical analyses to identify the phase and to study the growth mechanisms involved at the nanoscale. It is shown that the formation of the Ni3GaAs alloy on top of nanowires following the epitaxial relation Ni3GaAs(0001)∥GaAs(111) leads to a pyramidal shape with four faces. Finally, guidelines are presented to tune the shape of this alloy by varying the initial metal thickness and nanowire diameters. It will facilitate the fabrication of a nanoalloy structure with tailored shape characteristics to precisely align with a designated application.

Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate.

Vertical III-V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approach based on the structure of a thin III-V epitaxial layer on Si was proposed to obtain monolithic GaAs or GaSb nanowires as well as GaAs-Si nanowires with an axial heterostructure. Based on a few complementary metal-oxide-semiconductor-compatible fabrication steps, III-V nanowires with a high crystalline quality as well as a uniform diameter (30 nm), morphology, positioning, and orientation were fabricated. In addition, the patterning control of nanowires at the nanoscale was thoroughly characterized by structural and chemical analyses to finely tune the key process parameters. To properly control the morphology of the nanowires during reactive-ion etching (RIE), the balance between the plasma properties and the formation of a protective layer on the nanowire sidewall was studied in detail. Furthermore, high-resolution microscopy analyses were performed to gain a better understanding of the protective layer's composition and to observe the crystalline quality of the nanowires. This approach paves the way for the possible scale-up integration of III-V-based nanowire devices with conventional Si/complementary metal-oxide-semiconductor technology.

Hybridization-based DNA biosensing with a limit of detection of 4 fM in 30 s using an electrohydrodynamic concentration module fabricated by grayscale lithography.

Speeding up and enhancing the performances of nucleic acid biosensing technologies have remained drivers for innovation. Here, we optimize a fluorimetry-based technology for DNA detection based on the concentration of linear targets paired with probes. The concentration module consists of a microfluidic channel with the shape of a funnel in which we monitor a viscoelastic flow and a counter-electrophoretic force. We report that the technology performs better with a target longer than 100 nucleotides (nt) and a probe shorter than 30 nt. We also prove that the control of the funnel geometry in 2.5D using grayscale lithography enhances sensitivity by 100-fold in comparison to chips obtained by conventional photolithography. With these optimized settings, we demonstrate a limit of detection of 4 fM in 30 s and a detection range of more than five decades. This technology hence provides an excellent balance between sensitivity and time to result.

Challenges in nanofabrication for efficient optical metasurfaces.

Optical metasurfaces have raised immense expectations as cheaper and lighter alternatives to bulk optical components. In recent years, novel components combining multiple optical functions have been proposed pushing further the level of requirement on the manufacturing precision of these objects. In this work, we study in details the influence of the most common fabrication errors on the optical response of a metasurface and quantitatively assess the tolerance to fabrication errors based on extensive numerical simulations. We illustrate these results with the design, fabrication and characterization of a silicon nanoresonator-based metasurface that operates as a beam deflector in the near-infrared range.

Pushing the limits of optical information storage using deep learning.

Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust readout schemes must be explored. Here, we propose to encode multiple bits of information in the geometry of subwavelength dielectric nanostructures. A crucial problem in high-density information storage concepts is the robustness of the information readout with respect to fabrication errors and experimental noise. Using a machine-learning-based approach in which the scattering spectra are analysed by an artificial neural network, we achieve quasi-error-free readout of sequences of up to 9 bits, encoded in top-down fabricated silicon nanostructures. We demonstrate that probing few wavelengths instead of the entire spectrum is sufficient for robust information retrieval and that the readout can be further simplified, exploiting the RGB values from microscopy images. Our work paves the way towards high-density optical information storage using planar silicon nanostructures, compatible with mass-production-ready complementary metal-oxide-semiconductor technology.

Evolutionary multi-objective optimization of colour pixels based on dielectric nanoantennas.

The rational design of photonic nanostructures consists of anticipating their optical response from systematic variations of simple models. This strategy, however, has limited success when multiple objectives are simultaneously targeted, because it requires demanding computational schemes. To this end, evolutionary algorithms can drive the morphology of a nano-object towards an optimum through several cycles of selection, mutation and cross-over, mimicking the process of natural selection. Here, we present a numerical technique that can allow the design of photonic nanostructures with optical properties optimized along several arbitrary objectives. In particular, we combine evolutionary multi-objective algorithms with frequency-domain electrodynamical simulations to optimize the design of colour pixels based on silicon nanostructures that resonate at two user-defined, polarization-dependent wavelengths. The scattering spectra of optimized pixels fabricated by electron-beam lithography show excellent agreement with the targeted objectives. The method is self-adaptive to arbitrary constraints and therefore particularly apt for the design of complex structures within predefined technological limits.

Astigmatic multifocus microscopy enables deep 3D super-resolved imaging.

We have developed a 3D super-resolution microscopy method that enables deep imaging in cells. This technique relies on the effective combination of multifocus microscopy and astigmatic 3D single-molecule localization microscopy. We describe the optical system and the fabrication process of its key element, the multifocus grating. Then, two strategies for localizing emitters with our imaging method are presented and compared with a previously described deep 3D localization algorithm. Finally, we demonstrate the performance of the method by imaging the nuclear envelope of eukaryotic cells reaching a depth of field of ~4µm.