Theoretical and Experimental Analysis of Single-Arm Bimodal Plasmo-Photonic Refractive Index Sensors.

In this paper, we study both theoretically and experimentally the sensitivity of bimodal interferometric sensors where interference occurs between two plasmonic modes with different properties propagating in the same physical waveguide. In contrast to the well-known Mach-Zehnder interferometric (MZI) sensor, we show for the first time that the sensitivity of the bimodal sensor is independent of the sensing area length. This is validated by applying the theory to an integrated plasmo-photonic bimodal sensor that comprises an aluminum (Al) plasmonic stripe waveguide co-integrated between two accessible SU-8 photonic waveguides. A series of such bimodal sensors utilizing plasmonic stripes of different lengths were numerically simulated, demonstrating bulk refractive index (RI) sensitivities around 5700 nm/RIU for all sensor variants, confirming the theoretical results. The theoretical and numerical results were also validated experimentally through chip-level RI sensing experiments on three fabricated SU-8/Al bimodal sensors with plasmonic sensing lengths of 50, 75, and 100 µm. The obtained experimental RI sensitivities were found to be very close and equal to 4464, 4386, and 4362 nm/RIU, respectively, confirming that the sensing length has no effect on the bimodal sensor sensitivity. The above outcome alleviates the design and optical loss constraints, paving the way for more compact and powerful sensors that can achieve high sensitivity values at ultra-short sensing lengths.

Effect of Particle Size on the Orientation and Order of Assemblies of Functionalized Microscale Cubes Formed at the Water/Air Interface.

The impact of the particle size and wettability on the orientation and order of assemblies obtained by self-organization of functionalized microscale polystyrene cubes at the water/air interface is reported. An increase in the hydrophobicity of 10- and 5-µm-sized self-assembled monolayer-functionalized polystyrene cubes, as assessed by independent water contact angle measurements, led to a change of the preferred orientation of the assembled cubes at the water/air interface from face-up to edge-up and further to vertex-up, irrespective of microcube size. This tendency is consistent with our previous studies with 30-µm-sized cubes. However, the transitions among these orientations and the capillary force-induced structures, which change from flat plate to tilted linear and further to close-packed hexagonal arrangements, were observed to shift to larger contact angles for smaller cube size. Likewise, the order of the formed aggregates decreased significantly with decreasing cube size, which is tentatively attributed to the small ratio of inertial force to capillary force for smaller cubes in disordered aggregates, which results in more difficulties to reorient in the stirring process. Experiments with small fractions of larger cubes added to the water/air interface increased the order of smaller homo-aggregates to values similar to neat 30 µm cube assemblies. Hence, collisions of larger cubes or aggregates are shown to play a decisive role in breaking metastable structures to approach a global energy minimum assembly.

The Schottky barrier transistor in emerging electronic devices.

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.

A Resonant Graphene NEMS Vibrometer.

Measuring vibrations is essential to ensuring building structural safety and machine stability. Predictive maintenance is a central internet of things (IoT) application within the new industrial revolution, where sustainability and performance increase over time are going to be paramount. To reduce the footprint and cost of vibration sensors while improving their performance, new sensor concepts are needed. Here, double-layer graphene membranes are utilized with a suspended silicon proof demonstrating their operation as resonant vibration sensors that show outstanding performance for a given footprint and proof mass. The unveiled sensing effect is based on resonant transduction and has important implications for experimental studies involving thin nano and micro mechanical resonators that are excited by an external shaker.

Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers.

Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield, and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully clamped at their circumference and have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers, and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents, and are able to suspend larger silicon proof masses, as compared to the previous graphene ribbon devices. These findings are an important step toward bringing ultraminiaturized piezoresistive graphene NEMS closer toward deployment in emerging applications such as in wearable electronics, biomedical implants, and internet of things (IoT) devices.

Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes.

Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1-1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions.

Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films.

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe2), an exciting and unexplored 2D transition metal dichalcogenide material, is particularly interesting because its low temperature growth process is scalable and compatible with silicon technology. Here, we report the potential of thin PtSe2 films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe2 films grown by thermally assisted conversion of platinum at a complementary metal-oxide-semiconductor (CMOS)-compatible temperature of 400 °C. We report high negative gauge factors of up to -85 obtained experimentally from PtSe2 strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe2 membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe2 as a very promising candidate for future NEMS applications, including integration into CMOS production lines.

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication.

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III-V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established. Here, the first methylammonium lead iodide perovskite microdisc lasers monolithically integrated into silicon nitride PICs by such a top-down process are presented. The lasers show a record low lasing threshold of 4.7 µJcm-2 at room temperature for monolithically integrated lasers, which are complementary metal-oxide-semiconductor compatible and can be integrated in the back-end-of-line processes.

Noninvasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization.

Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane-based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale characterization techniques, to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and noninvasive Raman spectroscopy mapping to distinguish between free-standing and substrate-supported graphene, utilizing the different strain and doping levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.

Strain Gauges Based on CVD Graphene Layers and Exfoliated Graphene Nanoplatelets with Enhanced Reproducibility and Scalability for Large Quantities.

The two-dimensional material graphene promises a broad variety of sensing activities. Based on its low weight and high versatility, the sensor density can significantly be increased on a structure, which can improve reliability and reduce fluctuation in damage detection strategies such as structural health monitoring (SHM). Moreover; it initializes the basis of structure-sensor fusion towards self-sensing structures. Strain gauges are extensively used sensors in scientific and industrial applications. In this work, sensing in small strain fields (from -0.1% up to 0.1%) with regard to structural dynamics of a mechanical structure is presented with sensitivities comparable to bulk materials by measuring the inherent piezoresistive effect of graphene grown by chemical vapor deposition (CVD) with a very high aspect ratio of approximately 4.86 × 108. It is demonstrated that the increasing number of graphene layers with CVD graphene plays a key role in reproducible strain gauge application since defects of individual layers may become less important in the current path. This may lead to a more stable response and, thus, resulting in a lower scattering.. Further results demonstrate the piezoresistive effect in a network consisting of liquid exfoliated graphene nanoplatelets (GNP), which result in even higher strain sensitivity and reproducibility. A model-assisted approach provides the main parameters to find an optimum of sensitivity and reproducibility of GNP films. The fabricated GNP strain gauges show a minimal deviation in PRE effect with a GF of approximately 5.6 and predict a linear electromechanical behaviour up to 1% strain. Spray deposition is used to develop a low-cost and scalable manufacturing process for GNP strain gauges. In this context, the challenge of reproducible and reliable manufacturing and operating must be overcome. The developed sensors exhibit strain gauges by considering the significant importance of reproducible sensor performances and open the path for graphene strain gauges for potential usages in science and industry.

Inkjet printing of 2D layered materials.

Inkjet printing of 2D layered materials, such as graphene and MoS2, has attracted great interests for emerging electronics. However, incompatible rheology, low concentration, severe aggregation and toxicity of solvents constitute critical challenges which hamper the manufacturing efficiency and product quality. Here, we introduce a simple and general technology concept (distillation-assisted solvent exchange) to efficiently overcome these challenges. By implementing the concept, we have demonstrated excellent jetting performance, ideal printing patterns and a variety of promising applications for inkjet printing of 2D layered materials.

A graphene-based hot electron transistor.

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4).

Silver Nanoparticle-Assisted Electrochemically Exfoliated Graphene Inks Coated on PVA-Based Self-Healing Polymer Composites for Soft Electronics.

Smart sensors with self-healing capabilities have recently aroused increasing interest in applications in soft electronics. However, challenges remain in balancing the sensors' self-healing and compatibility between their sensing and substrate layers. This study evaluated several self-healing polymer substrates and graphene ink-based strain-sensing coatings. The optimum electrochemically exfoliated graphene (e-graphene)/silver nanoparticle-coated tannic acid (TA)/superabsorbent polymer/graphene oxide (GO) blended poly(vinyl alcohol) polymer composites exhibited improvements of 47.1 and 39.2%, respectively, for the healing efficiency in a substrate crack area and in the graphene-based sensing layer due to conductive layer adhesion. While TA was found to improve healing efficiency on the coating surface by forming hydrogen bonds between the sensing and polymer layers, GO healed the polymer surface due to its ability to form bonds in the polymer matrix. The superabsorbent polymer was found to absorb excess water in e-graphene dispersion due to its host-guest interaction, while also reducing the coating thickness.

Button shear testing for adhesion measurements of 2D materials.

Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.

Combined Structural and Plasmonic Enhancement of Nanometer-Thin Film Photocatalysis for Solar-Driven Wastewater Treatment.

Titanium dioxide (TiO2) thin films are commonly used as photocatalytic materials. Here, we enhance the photocatalytic activity of devices based on titanium dioxide (TiO2) by combining nanostructured glass substrates with metallic plasmonic nanostructures. We achieve a three-fold increase of the catalyst's surface area through nanoscale, three-dimensional patterning of periodic, conical grids, which creates a broadband optical absorber. The addition of aluminum and gold activates the structures plasmonically and increases the optical absorption in the TiO2 films to above 70% in the visible and NIR spectral range. We demonstrate the resulting enhancement of the photocatalytic activity with organic dye degradation tests under different light sources. Furthermore, the pharmaceutical drug Carbamazepine, a common water pollutant, is reduced in the aqueous solution by up to 48% in 360 min. Our approach is scalable and potentially enables future solar-driven wastewater treatment.

Graphene Coating of Nafion Membranes for Enhanced Fuel Cell Performance.

Electrochemically exfoliated graphene (e-G) thin films on Nafion membranes exhibit a selective barrier effect against undesirable fuel crossover. This approach combines the high proton conductivity of state-of-the-art Nafion and the ability of e-G layers to effectively block the transport of methanol and hydrogen. Nafion membranes are coated with aqueous dispersions of e-G on the anode side, making use of a facile and scalable spray process. Scanning transmission electron microscopy and electron energy-loss spectroscopy confirm the formation of a dense percolated graphene flake network, which acts as a diffusion barrier. The maximum power density in direct methanol fuel cell (DMFC) operation with e-G-coated Nafion N115 is 3.9 times higher than that of the Nafion N115 reference (39 vs 10 mW cm-2@0.3 V) at a 5M methanol feed concentration. This suggests the application of e-G-coated Nafion membranes for portable DMFCs, where the use of highly concentrated methanol is desirable.

Gate-activated photoresponse in a graphene p-n junction.

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.

Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation. Here, we show that device stability in graphene-based field-effect transistors with amorphous gate oxides can be improved by Fermi-level tuning. We deliberately tune the Fermi level of the channel to maximize the energy distance between the charge carriers in the channel and the defect bands in the amorphous aluminium gate oxide. Charge trapping is highly sensitive to the energetic alignment of the Fermi level of the channel with the defect band in the insulator, and thus, our approach minimizes the amount of electrically active border traps without the need to reduce the total number of traps in the insulator.

Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties.

PtSe2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.