Rectangular multilayer dielectric gratings with broadband high diffraction efficiency and enhanced laser damage resistance.

Broadband multilayer dielectric gratings (MDGs) with rectangular HfO2 grating profile were realized for the first time using a novel fabrication process that combines laser interference lithography, nanoimprint, atomic layer deposition and reactive ion-beam etching. The laser-induced damage initiating at the grating ridge was mitigated for two reasons. First, the rectangular grating profile exhibits the minimum electric-field intensity (EFI) enhancement inside the grating pillar compared to other trapezoidal profiles. Second, our etching process did not create nano-absorbing defects at the edge of the HfO2 grating where the peak EFI locates, which is unavoidable in traditional fabrication process. The fabricated MDGs showed a high laser induced damage threshold of 0.59J/cm2 for a Ti-sapphire laser with pulse width of 40 fs and an excellent broadband diffraction spectrum with 95% efficiency over 150 nm in TE polarization.

Hybrid application of laser-focused atomic deposition and extreme ultraviolet interference lithography methods for manufacturing of self-traceable nanogratings.

A novel hybrid method that combines the laser-focused atomic deposition (LFAD) and extreme ultraviolet (EUV) interference lithography has been introduced. The Cr grating manufactured by LFAD has advantages of excellent uniformity, low line edge roughness and its pitch value determined directly by nature constants (i.e. self-traceable). To further enhance the density of the Cr grating, the EUV interference lithography with 13.4 nm wavelength was employed, which replicated the master Cr grating onto a Si wafer with its pitch reduced to half. In order to verify the performance of the gratings manufactured by this novel method, both mask grating (Cr grating) and replicated grating (silicon grating) were calibrated by the metrological large range scanning probe microscope (Met.LR-SPM) at Physikalisch-Technische Bundesanstalt (PTB). The calibrated results show that both gratings have excellent short-term and long-term uniformity: (i) the calibrated position deviation (i.e. nonlinearity) of the grating is below ±1 nm; (ii) the deviation of mean pitch values of 6 randomly selected measurement locations is below 0.003 nm. In addition, the mean pitch value of the Cr grating is calibrated as 212.781 ± 0.008 nm (k = 2). It well agrees with its theoretical value of 212.7787 ± 0.0049 nm, confirming the self-traceability of the manufactured grating by the LFAD. The mean pitch value of the Si grating is calibrated as 106.460 ± 0.012 nm (k = 2). It corresponds to the shrinking factor of 0.500 33 of the applied EUV interference lithographic technique. This factor is very close to its theoretical value of 0.5. The uniform, self-traceable gratings fabricated using this novel approach can be well applied as reference materials in calibrating, e.g. the magnification and uniformity of almost all kinds of high resolution microscopes for nanotechnology.

Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C.

Low temperature Si epitaxy has become increasingly important due to its critical role in the encapsulation and performance of buried nanoscale dopant devices. We demonstrate epitaxial growth up to nominally 25 nm, at 250°C, with analysis at successive growth steps using STM and cross section TEM to reveal the nature and quality of the epitaxial growth. STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 °C. For Si on Si growth at 250 °C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Although the in-plane mobility of silicon is affected on the H: Si surface due to the presence of H atoms during initial sub-monolayer growth, STM images reveal long range order and demonstrate that growth proceeds by epitaxial island growth albeit with noticeable surface roughening.

Physical insight toward electric field enhancement at nodular defects in optical coatings.

Although the finite-difference time-domain (FDTD) technique has been prevailingly used to calculate the electric field intensity (EFI) enhancement at nodular defects in high-reflection (HR) coatings, the physical insight as to how the nodular features contribute to the intensified EFI is not explicitly revealed yet, which in turn limits the solutions that improve the laser-induced damage threshold (LIDT) of nodules by decreasing the EFI enhancement. Here, a simplified model is proposed to describe the intensified EFI in nodules: 1) the nodule works as a microlens and its focal length can be predicted using a simple formula, 2) the portion of incident light that penetrates through the HR coating can be estimated by knowing the angular dependent transmittance (ADT) of the nodule, 3) strong EFI enhancement is created when the focal point is within the nodule and simultaneously a certain portion of light penetrates to the focal position. In the light of the proposed model, a broadband HR coating was used to reduce the EFI enhancement at the seed by a factor about 10, which leads to a 20 times increment of the LIDT. This work therefore not only deepens the physical understanding of EFI enhancement at nodules but also provides a new way to increase the LIDT of multilayer reflective optics.

Calibrate the non-orthogonal error of AFM with two-dimensional self-traceable grating.

The calibration of the non-orthogonal error in nanoscale measurements is of paramount importance for analytical measuring instruments. Particularly, the calibration of non-orthogonal errors in atomic force microscopy (AFM) is essential for the traceable measurements of novel materials and two-dimensional (2D) crystals. The 2D self-traceable grating with a theoretical non-orthogonal angle of less than 0.0027° and an expanded uncertainty of 0.003° (k = 2) are measured by the Metrological Large Range Scanning Probe Microscope (Met. LR-SPM). In this study, we characterized the local and overall non-orthogonal error in AFM scans and proposed a protocol to tune the optimal scanning parameters of AFM minimizing the non-orthogonal error. We presented the method for accurately calibrating a commercial AFM system for non-orthogonal by establishing a detailed uncertainty budget and errors analysis. Our results verified the important advantages of the 2D self-traceable grating in calibrating precision instruments.

A new type of nanoscale reference grating manufactured by combined laser-focused atomic deposition and x-ray interference lithography and its use for calibrating a scanning electron microscope.

Calibration of magnification and nonlinearity of scanning electron microscopy (SEM) is an essential task. In this paper, we proposed a new type of 1D grating sample fabricated by combining laser-focused atomic deposition and x-ray interference lithography as a lateral standard for calibrating SEMs. The calibrations of the grating pattern by a metrological large-range atomic force microscope indicate that the grating sample exhibits outstanding pattern uniformity that surpasses conventional samples fabricated by e-beam lithography: (1) the nonlinear deviation of the grating structures is below +/- 0.5 nm over a measurement range of 5 µm; (2) the maximal variation of the calibrated mean pitch values is lower than 0.01 nm at different locations randomly selected all over the pattern area. The proposed new sample is applied for accurately calibrating the magnification and nonlinearity of a commercial SEM, showing its advantages of easy-of-use and high accuracy. The influence of the defocus level of SEM on the calibration result is also demonstrated. This research offers a feasible solution for highly accurate SEM calibration needed for 3D nanometrology and hybrid metrology demanded in metrology of modern nanoelectronics devices and systems.