Suspended MoS2 Photodetector Using Patterned Sapphire Substrate.

The introduction of patterned sapphire substrates (PSS) has been regarded as an effective method to improve the photoelectric performance of 2D layered materials in recent years. Molybdenum disulfide (MoS2 ), an intriguing transition metal 2D materials with splendid photoresponse owing to a direct-indirect bandgap transition at monolayer, shows promising optoelectronics applications. Here, a large-scale, continuous multilayer MoS2 film is prepared on a SiO2 /Si substrate and transferred to flat sapphire substrate and PSS, respectively. An enhanced dynamic distribution of local electric field and concentrated photon excitons across the interface between MoS2 and patterned sapphire substrates are revealed by the finite-difference time-domain simulation. The photoelectric performance of the MoS2 /PSS photodetector is improved under the three lasers of 365, 460, and 660 nm. Under the 365 nm laser, the photocurrent increased by 3 times, noise equivalent power (NEP) decreases to 1.77 × 10-14 W/Hz1/2 and specific detectivity (D*) increases to 1.2 × 1010 Jones. Meanwhile, the responsivity is increased by 7 times at 460 nm, and the response time of the MoS2 /PSS photodetector is also shortened under three wavelengths. The work demonstrates an effective method for enhancing the optical properties of photodetectors and enabling simultaneous detection of broad-spectrum emissions.

ReS2 on GaN Photodetector Using H+ Ion-Cut Technology.

The wafer-scale single-crystal GaN film was transferred from a commercial bulk GaN wafer onto a Si (100) substrate by combining ion-cut and surface-activated bonding. Well-defined, uniformly thick, and large-scale wafer size ReS2 multilayers were grown on the GaN substrate. Finally, ReS2 photodetectors were fabricated on GaN and sapphire substrates, respectively, and their performances were compared. Due to the polarization effect of GaN, the ReS2/GaN photodetector showed better performance. The ReS2/GaN photodetector has a responsivity of 40.12 A/W, while ReS2/sapphire has a responsivity of 0.17 A/W. In addition, the ReS2/GaN photodetector properties have reached an excellent reasonable level, including a photoconductive gain of 447.30, noise-equivalent power of 1.80 × 10-14 W/Hz1/2, and detectivity of 1.21 × 1010 Jones. This study expands the way to enhance the performance of ReS2 photodetectors.

3A-Amino-3A-Deoxy-(2AS, 3AS)-ß-Cyclodextrin Hydrate/Tin Disulfide Modified Screen-Printed Carbon Electrode for the Electrochemical Detection of Polychlorinated Biphenyls.

Polychlorinated biphenyls (PCBs) are persistent organic pollutants that are widely distributed in the environment. It is noteworthy that the PCBs are endocrine-disrupting substances, and their toxicity induces cancer and damage to the mammalian reproductive system, immune system, stomach, skin, liver, etc. This work aimed to synthesize 3A-amino-3A-deoxy-(2AS, 3AS)-ß-cyclodextrin hydrate/tin disulfide composite material and to study its material properties, electrochemical properties, and application to PCB detection. The nanostructured tin disulfide (SnS2) synthesized by hydrothermal technique and 3A-amino-3A-deoxy-(2AS, 3AS)-ß-cyclodextrin hydrate were sequentially modified onto the disposable screen-printed carbon electrode (SPCE) via titration using a micropipette. The 3A-amino-3A-deoxy-(2AS, 3AS)-ß-cyclodextrin hydrate (ß-CD) improved the selectivity of the modified electrode. The fabricated ß-CD/SnS2/SPCE was employed to determine the presence of PCBs by cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The detection range was 0.625-80 µM, with a limit detection of approximately 5 µM. The electrodes were as stable as 88% after 7 days' storage. The results showed that the ß-CD successfully encapsulated PCBs to achieve an electrochemical sensor that reduced the time and increased the convenience of PCBs detection.

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering.

Molybdenum disulfide (MoS2) has substantial application prospects in the field of electronic devices. The fabrication of devices of excellent quality based on MoS2 films is an important research direction. In this study, based on the atomic layer deposition technique, large-area MoS2 films were grown, and top-gate MoS2-based field-effect transistor arrays were fabricated on four substrates (AlN, GaN, sapphire, and SiO2). It was found that the interface defects that were introduced by lattice mismatch and roughness of the growth substrate could cause an exponential (102) drop in mobility. Because of the small lattice mismatch and excellent surface quality, transistors on the AlN substrate have shown an enhanced mobility (10.45 cm2 V-1 s-1) compared to transistors on the other substrates. This study proves that the AlN substrate is a superior substrate for large-area and high-performance MoS2 film synthesis. This result can also be applied in higher-level microelectronic systems, such as in digital logic circuit design.