Detalhe da pesquisa
1.
Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiOx Membrane on Vertical Silicon Nanowires in Electrolyte-Insulator-Nanowire Structure.
Anal Chem
; 92(12): 8064-8071, 2020 06 16.
Artigo
em Inglês
| MEDLINE | ID: mdl-32401013
2.
Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO x-Based RRAM.
Langmuir
; 35(11): 3897-3906, 2019 Mar 19.
Artigo
em Inglês
| MEDLINE | ID: mdl-30791683
3.
Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.
Phys Chem Chem Phys
; 19(38): 25938-25948, 2017 Oct 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-28933487
4.
Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO x Interfacial Layer in a-CO x -Based Conductive Bridge Random Access Memory.
ACS Omega
; 5(12): 7032-7043, 2020 Mar 31.
Artigo
em Inglês
| MEDLINE | ID: mdl-32258939
5.
Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection.
Sci Rep
; 7(1): 11240, 2017 09 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-28894240
6.
Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.
Sci Rep
; 7(1): 4735, 2017 07 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-28680111
7.
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.
Nanoscale Res Lett
; 11(1): 389, 2016 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-27605241
8.
Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.
Nanoscale Res Lett
; 11(1): 434, 2016 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-27680740
9.
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure.
Nanomicro Lett
; 7(4): 392-399, 2015.
Artigo
em Inglês
| MEDLINE | ID: mdl-30464987
10.
Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure.
Nanoscale Res Lett
; 10(1): 392, 2015 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-26446075
11.
Conductive-bridging random access memory: challenges and opportunity for 3D architecture.
Nanoscale Res Lett
; 10: 188, 2015.
Artigo
em Inglês
| MEDLINE | ID: mdl-25977660
12.
Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.
Nanoscale Res Lett
; 9(1): 366, 2014.
Artigo
em Inglês
| MEDLINE | ID: mdl-25136279
13.
Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.
Nanoscale Res Lett
; 9(1): 292, 2014.
Artigo
em Inglês
| MEDLINE | ID: mdl-24982604
14.
RRAM characteristics using a new Cr/GdOx/TiN structure.
Nanoscale Res Lett
; 9(1): 2404, 2014 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-26088980
15.
Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.
Nanoscale Res Lett
; 9(1): 2410, 2014 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-26088986
16.
Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure.
Nanoscale Res Lett
; 9(1): 179, 2014 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-24725352
17.
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.
Nanoscale Res Lett
; 9(1): 125, 2014 Mar 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-24636463
18.
Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.
Nanoscale Res Lett
; 9(1): 12, 2014 Jan 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-24400888
19.
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.
Nanoscale Res Lett
; 9(1): 152, 2014.
Artigo
em Inglês
| MEDLINE | ID: mdl-24791160
20.
Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.
Nanoscale Res Lett
; 8(1): 509, 2013 Dec 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-24305116