Wide angle holographic video projection display.

Holographic projection displays provide high diffraction efficiency. However, they have a limited projection angle. This work proposes a holographic projection display with a wide angle, which gives an image of size 306mm×161mm at 700 mm and reduced speckle noise. The solution uses single Fourier lens imaging with a frequency filter and hologram generation utilizing complex coding and nonparaxial diffraction. The experiment was performed with a 4K phase-only spatial light modulator (SLM) to prove the high efficiency of the developed numerical tools. Optical reconstruction shows high resolution and high image quality achieved from a single frame. Hence, displaying video at a full frame rate of the SLM is possible.

Transparent Fingerprint Sensor System for Large Flat Panel Display.

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 µm × 50 µm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability.

Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. However, they are unfavorable for building stretchable electronic products due to their brittle nature. Because of this drawback, they have mostly been placed on non-stretchable parts to avoid mechanical strain, burdening the deformable interconnects, which link these rigid parts, with the strain of the entire system. Integration density must therefore be sacrificed when stretchability is the first priority because the portion of stretchable wirings should be raised. In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embedding the devices into stretchable serpentine strings to defeat such trade-off. The embedded transistors do not hide from deformation and endure strain up to 100% by themselves; thus, integration density can be enhanced without sacrificing the stretchability. We expect that our approach can create more compact stretchable electronics with high-end functionality than before.

Dual-Functional Self-Attachable and Stretchable Interface for Universal Three-Dimensional Modular Electronics.

Stretchable electronics have become essential for custom-built electronics, self-assembling robotics, and wearable devices. Although many stretchable electronics contain integrated systems, they still limit bulky connection systems. We introduce a new dual-functioned self-attachable and stretchable interface (SASI), allowing a direct and instant interconnection between rigid and soft electronics. The SASI consists of a sticky and stretchable substrate and surface-embedded serpentine conductors with the single-sided polyimide fabricated using the embedded transfer process. The adhesion property of the SASI is controlled by the mixed elastomer ratio. The resulting sticky and conductive SASI can instantly adhere to a metal surface and create conductive paths. The SASI serpentine conductors exhibit high stretchability (∼290%) and provide self-attachable, re-attachable, and low-resistant electrical contacts (0.85 ohms in 0.25 mm2) between interfaces without pressure, heat, or extra solder. In addition, three-dimensional curved and modular electronics can be formed with the SASI by compiling functional blocks. SASI provides a novel strategy for assembling functional chips or modules for stretchable electronics, opening a path to onboard integrated electronics that are customizable by users for real-world stretchable electronics.

Synergetic contribution of fluorinated azide for high EQE and operational stability of top-illuminated, semitransparent, photomultiplication-type organic photodiodes.

In this study, it is shown that fluorinated azide, employed as a functional additive to photomultiplication-type organic photodiodes (PM-OPDs), can not only enhance the operational stability by freezing the morphology consisting of matrix polymer/localized acceptor but also stabilize the trapped electron states such that the photomultiplication mechanism can be accelerated further, leading to exceptionally high external quantum efficiency (EQE). The consequent semitransparent OPD consisting of molybdenum oxide (MoO3)/Au/MoO3/photoactive layer/polyethyleneimine ethoxylated/indium tin oxide (ITO) rendered a maximum EQE of over 500 000% and 370 000% under bottom and top illumination, respectively. Owing to the remarkably high EQE, high specific detectivity of 5.6 × 1013 Jones and low noise-equivalent power of 5.35 × 10-15 W Hz-0.5 were also demonstrated. Furthermore, the OPD demonstrated stable performance during 20 h of continuous operation and minimal performance degradation even after the damp heat test. To fully visualize the advantages of the proposed high-EQE, top-illuminated, semitransparent OPD with spectral asymmetry between absorption and detection, a reflection-type fingerprint platform consisting of 1 OPD-1 oxide field-effect transistor complementary metal-oxide-semiconductor backplane (300 ppi) is designed and fabricated. The successful recognition of the fingerprint of one of the authors is demonstrated, which indicates the feasibility of the proposed PM-OPD for sensing weak light intensity.

Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials.

We propose rewritable full-color computer-generated holograms (CGHs) based on color-selective diffraction using the diffractive optical component with the resonant characteristic. The structure includes an ultrathin layer of phase-change material Ge2Sb2Te5 (GST) on which a spatial binary pattern of amorphous and crystalline states can be recorded. The CGH patterns can be easily erased and rewritten by the pulsed ultraviolet laser writing technique owing to the thermally reconfigurable characteristic of GST. We experimentally demonstrate that the fabricated CGH, having a fine pixel pitch of 2 µm and a size of 32.8 × 32.8 mm2, reconstructs the three-dimensional holographic images. In addition, the feasibility of the rewritable property is verified by erasing and rewriting part of the CGH.

Correction: Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials.

Correction for 'Rewritable full-color computer-generated holograms based on color-selective diffractive optical components including phase-change materials' by Chi-Young Hwang et al., Nanoscale, 2018, DOI: 10.1039/c8nr04471f.