Doping Approaches for Organic Semiconductors.

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non-Fullerene Acceptors for Biometric Monitoring.

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors.

The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.

Enhanced sub-1 eV detection in organic photodetectors through tuning polymer energetics and microstructure.

One of the key challenges facing organic photodiodes (OPDs) is increasing the detection into the infrared region. Organic semiconductor polymers provide a platform for tuning the bandgap and optoelectronic response to go beyond the traditional 1000-nanometer benchmark. In this work, we present a near-infrared (NIR) polymer with absorption up to 1500 nanometers. The polymer-based OPD delivers a high specific detectivity D* of 1.03 × 1010 Jones (-2 volts) at 1200 nanometers and a dark current Jd of just 2.3 × 10-6 ampere per square centimeter at -2 volts. We demonstrate a strong improvement of all OPD metrics in the NIR region compared to previously reported NIR OPD due to the enhanced crystallinity and optimized energy alignment, which leads to reduced charge recombination. The high D* value in the 1100-to-1300-nanometer region is particularly promising for biosensing applications. We demonstrate the OPD as a pulse oximeter under NIR illumination, delivering heart rate and blood oxygen saturation readings in real time without signal amplification.

Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cm2 V-1 s-1 via Microstructural Tuning.

There is a growing demand to attain organic materials with high electron mobility, µe , as current reliable reported values are significantly lower than those exhibited by their hole mobility counterparts. Here, it is shown that a well-known nonfullerene-acceptor commonly used in organic solar cells, that is, BTP-4F (aka Y6), enables solution-processed organic thin-film transistors (OTFT) with a µe as high as 2.4 cm2  V-1  s-1 . This value is comparable to those of state-of-the-art n-type OTFTs, opening up a plethora of new possibilities for this class of materials in the field of organic electronics. Such efficient charge transport is linked to a readily achievable highly ordered crystalline phase, whose peculiar structural properties are thoroughly discussed. This work proves that structurally ordered nonfullerene acceptors can exhibit intrinsically high mobility and introduces a new approach in the quest of high µe organic materials, as well as new guidelines for future materials design.

Effects of Molecular Encapsulation on the Photophysical and Charge Transport Properties of a Naphthalene Diimide Bithiophene Copolymer.

Engineering the molecular structure of conjugated polymers is key to advancing the field of organic electronics. In this work, we synthesized a molecularly encapsulated version of the naphthalene diimide bithiophene copolymer PNDIT2, which is among the most popular high charge mobility organic semiconductors in n-type field-effect transistors and non-fullerene acceptors in organic photovoltaic blends. The encapsulating macrocycles shield the bithiophene units while leaving the naphthalene diimide units available for intermolecular interactions. With respect to PNDIT2, the encapsulated counterpart displays an increased backbone planarity. Molecular encapsulation prevents preaggregation of the polymer chains in common organic solvents, while it permits π-stacking in the solid state and promotes thin film crystallinity through an intermolecular-lock mechanism. Consequently, n-type semiconducting behavior is retained in field-effect transistors, although charge mobility is lower than in PNDIT2 due to the absence of the fibrillar microstructure that originates from preaggregation in solution. Hence, molecularly encapsulating conjugated polymers represent a promising chemical strategy to tune the molecular interaction in solution and the backbone conformation and to consequently control the nanomorphology of casted films without altering the electronic structure of the core polymer.

Stable and Solution-Processable Cumulenic sp-Carbon Wires: A New Paradigm for Organic Electronics.

Solution-processed, large-area, and flexible electronics largely relies on the excellent electronic properties of sp2 -hybridized carbon molecules, either in the form of π-conjugated small molecules and polymers or graphene and carbon nanotubes. Carbon with sp-hybridization, the foundation of the elusive allotrope carbyne, offers vast opportunities for functionalized molecules in the form of linear carbon atomic wires (CAWs), with intriguing and even superior predicted electronic properties. While CAWs represent a vibrant field of research, to date, they have only been applied sparingly to molecular devices. The recent observation of the field-effect in microcrystalline cumulenes suggests their potential applications in solution-processed thin-film transistors but concerns surrounding the stability and electronic performance have precluded developments in this direction. In the present study, ideal field-effect characteristics are demonstrated for solution-processed thin films of tetraphenyl[3]cumulene, the shortest semiconducting CAW. Films are deposited through a scalable, large-area, meniscus-coating technique, providing transistors with hole mobilities in excess of 0.1 cm2  V-1  s-1 , as well as promising operational stability under dark conditions. These results offer a solid foundation for the exploitation of a vast class of molecular semiconductors for organic electronics based on sp-hybridized carbon systems and create a previously unexplored paradigm.

14 GHz Schottky Diodes Using a p-Doped Organic Polymer.

The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self-aligned asymmetric nanogap electrodes (≈25 nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C16 IDT-BT is used, as the high hole mobility polymer, and the impact of p-doping on the diode performance is studied. Pristine C16 IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2 pF). Doping of C16 IDT-BT with the molecular p-dopant C60 F48 improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ≈14 GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area RF electronics of the future.

A Low-Swelling Polymeric Mixed Conductor Operating in Aqueous Electrolytes.

Organic mixed conductors find use in batteries, bioelectronics technologies, neuromorphic computing, and sensing. While great progress has been achieved, polymer-based mixed conductors frequently experience significant volumetric changes during ion uptake/rejection, i.e., during doping/de-doping and charging/discharging. Although ion dynamics may be enhanced in expanded networks, these volumetric changes can have undesirable consequences, e.g., negatively affecting hole/electron conduction and severely shortening device lifetime. Here, the authors present a new material poly[3-(6-hydroxy)hexylthiophene] (P3HHT) that is able to transport ions and electrons/holes, as tested in electrochemical absorption spectroscopy and organic electrochemical transistors, and that exhibits low swelling, attributed to the hydroxylated alkyl side-chain functionalization. P3HHT displays a thickness change upon passive swelling of only +2.5%, compared to +90% observed for the ubiquitous poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, and +10 to +15% for polymers such as poly(2-(3,3'-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-[2,2'-bithiophen]-5-yl)thieno[3,2-b]thiophene) (p[g2T-TT]). Applying a bias pulse during swelling, this discrepancy becomes even more pronounced, with the thickness of P3HHT films changing by <10% while that of p(g2T-TT) structures increases by +75 to +80%. Importantly, the initial P3HHT film thickness is essentially restored after de-doping while p(g2T-TT) remains substantially swollen. The authors, thus, expand the materials-design toolbox for the creation of low-swelling soft mixed conductors with tailored properties and applications in bioelectronics and beyond.

A Field-Effect Transistor Based on Cumulenic sp-Carbon Atomic Wires.

Carbyne and linear carbon structures based on sp-hybridization are attractive targets as the ultimate one-dimensional system (i.e., one-atom in diameter) featuring wide tunability of optical and electronic properties. Two possible structures exist for sp-carbon atomic wires: (a) the polyynes with alternated single-triple bonds and (b) the cumulenes with contiguous double bonds. Theoretical studies predict semiconducting behavior for polyynes, while cumulenes are expected to be metallic. Very limited experimental work, however, has been directed toward investigating the electronic properties of these structures, mostly at the single-molecule or monolayer level. However, sp-carbon atomic wires hold great potential for solution-processed thin-film electronics, an avenue not exploited to date. Herein, we report the first field-effect transistor (FET) fabricated employing cumulenic sp-carbon atomic wires as a semiconductor material. Our proof-of-concept FET device is easily fabricated by solution drop casting and paves the way for exploiting sp-carbon atomic wires as active electronic materials.

Nonfullerene-Based Organic Photodetectors for Ultrahigh Sensitivity Visible Light Detection.

It is well established that for organic photodetectors (OPDs) to compete with their inorganic counterparts, low dark currents at reverse bias must be achieved. Here, two rhodanine-terminated nonfullerene acceptors O-FBR and O-IDTBR are shown to deliver low dark currents at -2 V of 0.17 and 0.84 nA cm-2, respectively, when combined with the synthetically scalable polymer PTQ10 in OPD. These low dark currents contribute to the excellent sensitivity to low light of the detectors, reaching values of 0.57 µW cm-2 for PTQ10:O-FBR-based OPD and 2.12 µW cm-2 for PTQ10:O-IDTBR-based OPD. In both cases, this sensitivity exceeds that of a commercially available silicon photodiode. The responsivity of the PTQ10:O-FBR-based OPD of 0.34 AW-1 under a reverse bias of -2 V also exceeds that of a silicon photodiode. Meanwhile, the responsivity of the PTQ10:O-IDTBR of 0.03 AW-1 is limited by the energetic offset of the blend. The OPDs deliver high specific detectivities of 9.6 × 1012 Jones and 3.3 × 1011 Jones for O-FBR- and O-IDTBR-based blends, respectively. Both active layers are blade-coated in air, making them suitable for high-throughput methods. Finally, all three of the materials can be synthesized at low cost and on a large scale, making these blends good candidates for commercial OPD applications.

The Importance of Materials Design to Make Ions Flow: Toward Novel Materials Platforms for Bioelectronics Applications.

Chemical design criteria for materials for bioelectronics applications using a series of copolymer derivatives based on poly(3-hexylthiophene) are established. Directed chemical design via side-chain functionalization with polar groups allows manipulation of ion transport and ion-to-electron transduction. Insights gained will permit increased use of the plethora of materials employed in the organic electronics area for application in the bioelectronics field.