Fluorinated organic ammonium salt passivation for high-efficiency and stable inverted CsPbI2Br perovskite solar cells.

All-inorganic CsPbI2Br inverted perovskite solar cells (PSCs) have drawn increasing attention because of their outstanding thermal stability and compatible process with tandem cells. However, relatively low open circuit voltage (Voc) has lagged their progress far behind theoretical limits. Herein, we introduce phenylmethylammonium iodide and 4-trifluoromethyl phenylmethylammonium iodide (CFPMAI) on the surface of a CsPbI2Br perovskite film and investigate their passivation effects. It is found that CFPMAI with a -CF3 substituent significantly decreases the trap density of the perovskite film by forming interactions with the under-coordinated Pb2+ ions and effectively suppresses the non-radiative recombination in the resulting PSC. In addition, CFPMAI surface passivation facilitates the optimization of energy-level alignment at the CsPbI2Br perovskite/[6,6]-phenyl C61 butyric acid methyl ester interface, resulting in improved charge extraction from the perovskite to the charge transport layer. Consequently, the optimized inverted CsPbI2Br device exhibits a markedly improved champion efficiency of 14.43% with a Voc of 1.12 V, a Jsc of 16.31 mA/cm2, and a fill factor of 79.02%, compared to the 10.92% (Voc of 0.95 V) efficiency of the control device. This study confirms the importance of substituent groups on surface passivation molecules for effective passivation of defects and optimization of energy levels, particularly for Voc improvement.

All layers patterned conical nanostructured thin-film silicon solar cells for light-trapping efficiency improvement.

Thin-film silicon solar cells (TSSC) has received great attention due to its advantages of low cost and eco-friendly. However, traditional single-layer patterned solar cells (SPSC) still fall short in light-trapping efficiency. This article presents an all layers patterned (ALP) conical nanostructured TSSC to enhance the low absorption caused by the thin absorption layers. The Finite-Difference Time-Domain result shows that a photocurrent density up to 41.27 mA/cm2 can be obtained for the structure, which is 31.39% higher than that of the SPSC. An electrical optimization simulation of doping concentration was carried out on the parameters of the optically optimal structure of the model. The power conversion efficiency is 17.15%, which is 1.72 times higher than that of the planar structure. These results demonstrate a success for the potential and prospect of the fully patterned nanostructures in thin-film photovoltaic devices.

Tunable and anisotropic perfect absorber using graphene-black phosphorus nanoblock.

Two-dimensional (2D) materials, which have attracted attention due to intriguing optical properties, form a promising building block in optical and photonic devices. This paper numerically investigates a tunable and anisotropic perfect absorber in a graphene-black phosphorus (BP) nanoblock array structure. The suggested structure exhibits polarization-dependent anisotropic absorption in the mid-infrared, with maximum absorption of 99.73% for x-polarization and 53.47% for y-polarization, as determined by finite-difference time-domain FDTD analysis. Moreover, geometrical parameters and graphene and BP doping amounts are possibly employed to tailor the absorption spectra of the structures. Hence, our results have the potential in the design of polarization-selective and tunable high-performance devices in the mid-infrared, such as polarizers, modulators, and photodetectors.

Individually tunable array reflector for amplitude and phase modulation.

Based on graphene's phase modulation property and vanadium dioxide's amplitude modulation property, we developed an array reflector for terahertz frequencies that is individually adjustable. Starting with a theoretical analysis, we look into the effects of voltage on the Fermi level of graphene and temperature on the conductivity of vanadium dioxide, analyze the beam focusing characteristics, and finally link the controllable quantities with the reflected beam characteristics to independently regulate each cell in the array. The simulation findings demonstrate that the suggested array structure can precisely manage the focus point's position, intensity, and scattering degree and that, with phase compensation, it can control the wide-angle incident light. The array structure offers a novel concept for adjustable devices and focusing lenses, which has excellent potential for study and application.

Improvement in efficiency of micromorph tandem silicon solar cells by designing proper interfaces.

Efficient light management for micromorph tandem solar cells is achieved in this Letter by the combined application of TiO(2) and SiO(x) interlayers. Here, TiO(2) is incorporated into a ZnO/a-Si interface as an antireflection layer and SiO(x) is incorporated into an a-Si/µc-Si interface as an intermediate reflecting layer. Solar cells with such architecture not only increase the light absorption but also reduce the mismatch losses of current between the top and bottom cells. The key results, as evidenced by the spectral response measurements, are that the total photocurrent increases from 22.62 to 24.35 mA/cm(2), as well as the short circuit current density of the two component cells is reached to a delicate balance. The influences of the interlayer thickness and morphology on the improvement have been investigated using an electromagnetic simulation in order to take full advantage of this design.

Performance enhancement in a-Si:H/µc-Si:H tandem solar cells with periodic microstructured surfaces.

Here we report on an efficient light-coupling scheme with a periodic microstructured surface to enhance the performance of thin film silicon solar cells. The centerpiece of the surface structure is the hemispherical pit arrays (HPAs), which are fabricated using an inexpensive and scalable process. The integration of HPAs into micromorph tandem thin film silicon solar cells leads to superior broadband reflection suppression properties. With this design, the reflection losses of the tandem cell are reduced to only 1.5%. We demonstrate an efficiency increase from 11.67% to 12.23% compared to a conventional cell with a flat surface, with a 4.6% increase in short circuit current density. The surface microstructures reported here can be applied to a variety of photovoltaic devices to further improve their performance.

APbI3-A2AgBiI6 Double-Layer Perovskite Film for a Self-Powered and High-Stability X-ray Detector.

The development of lead halide perovskite X-ray detectors has promising applications in medical imaging and security inspection but is hindered by poor long-term stability and drift of the dark current and photocurrent. Herein, we design a (Cs0.05MA0.65FA0.3)PbI3-(Cs0.1MA1.3FA0.6)AgBiI6 double-layer perovskite film to assemble a self-powered flat-panel X-ray detector. The demonstrated X-ray detector achieves an outstanding self-powered sensitivity of 80 µC Gyair-1 cm-2 under a 0 V bias. More importantly, owing to the inhibition of the phase transition process and ion migration of (Cs0.05MA0.65FA0.3)PbI3 by the (Cs0.1MA1.3FA0.6)AgBiI6 layer, the device exhibits excellent continuous operating stability with a retention rate of 99% dark current and photocurrent over X-ray pulses of up to 4000 s and excellent long-term stability without a loss of the original response current after 150 days in an air environment. The strategy of double-layer perovskites improves the stability and sensitivity of devices, which paves a path for the industrial application of lead halide perovskite X-ray detectors.

Dynamically Tunable and Multifunctional Polarization Beam Splitters Based on Graphene Metasurfaces.

Based on coupled-mode theory (CMT) and the finite-difference time-domain (FDTD) approach, we propose a graphene metasurface-based and multifunctional polarization beam splitter that is dynamically tunable. The structure, comprising two graphene strips at the top and bottom and four triangular graphene blocks in the center layer, can achieve triple plasma-induced transparency (PIT). In a single polarization state, the computational results reveal that synchronous or asynchronous six-mode electro-optical switching modulation may be performed by modifying the Fermi levels of graphene, with a maximum modulation degree of amplitude (MDA) of 97.6% at 5.148 THz. In addition, by varying the polarization angle, a polarization-sensitive, tunable polarization beam splitter (PBS) with an extinction ratio and insertion loss of 19.6 dB and 0.35 dB at 6.143 THz, respectively, and a frequency modulation degree of 25.2% was realized. Combining PIT with polarization sensitivity provides a viable platform and concept for developing graphene metasurface-based multifunctional and tunable polarization devices.

CsPbBr3 Perovskite Nanocrystal Grown on MXene Nanosheets for Enhanced Photoelectric Detection and Photocatalytic CO2 Reduction.

All-inorganic CsPbX3 (X = Cl, Br or I) perovskite nanocrystals have attracted extensive interest recently due to their exceptional optoelectronic properties. In an effort to improve the charge separation and transfer following efficient exciton generation in such nanocrystals, novel functional nanocomposites were synthesized by the in situ growth of CsPbBr3 perovskite nanocrystals on two-dimensional MXene nanosheets. Efficient excited state charge transfer occurs between CsPbBr3 NCs and MXene nanosheets, as indicated by significant photoluminescence (PL) quenching and much shorter PL decay lifetimes compared with pure CsPbBr3 NCs. The as-obtained CsPbBr3/MXene nanocomposites demonstrated increased photocurrent generation in response to visible light and X-ray illumination, attesting to the potential application of these heterostructure nanocomposites for photoelectric detection. The efficient charge transfer also renders the CsPbBr3/MXene nanocomposite an active photocatalyst for the reduction of CO2 to CO and CH4. This work provides a guide for exploration of perovskite materials in next-generation optoelectronics, such as photoelectric detectors or photocatalyst.

Self-Confined Growth of Ultrathin 2D Nonlayered Wide-Bandgap Semiconductor CuBr Flakes.

2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Zf , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W-1 , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 1011 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

All-inorganic perovskite CsPbX3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

Electromagnetic Spectrum Analysis and Its Influence on the Photoelectric Conversion Efficiency of Solar Cells.

The electromagnetic spectrum and the photoelectric conversion efficiency of the silicon hexagonal nanoconical hole (SiHNH) arrays based solar cells is systematically analyzed according to Rigorous Coupled Wave Analysis (RCWA) and Modal Transmission Line (MTL) theory. An ultimate efficiency of the optimized SiHNH arrays based solar cell is up to 31.92% in consideration of the absorption spectrum, 4.52% higher than that of silicon hexagonal nanoconical frustum (SiHNF) arrays. The absorption enhancement of the SiHNH arrays is due to its lower reflectance and more supported guided-mode resonances, and the enhanced ultimate efficiency is insensitive to bottom diameter (D(bot)) of nanoconical hole and the incident angle. The result provides an additional guideline for the nanostructure surface texturing fabrication design for photovoltaic applications.

Gas-Sensing Devices Based on Zn-Doped NiO Two-Dimensional Grainy Films with Fast Response and Recovery for Ammonia Molecule Detection.

Zn-doped NiO two-dimensional grainy films on glass substrates are shown to be an ammonia-sensing material with excellent comprehensive performance, which could real-time detect and monitor ammonia (NH3) in the surrounding environment. The morphology and structure analysis indicated that the as-fabricated semiconductor films were composed of particles with diameters ranging from 80 to 160 nm, and each particle was composed of small crystalline grain with a narrow size about 20 nm, which was the face-centered cubic single crystal structure. X-ray diffraction peaks shifted toward lower angle, and the size of the lattice increased compared with undoped NiO, which demonstrated that zinc ions have been successfully doped into the NiO host structure. Simultaneously, we systematically investigated the gas-sensing properties of the Zn-doped NiO sensors for NH3 detection at room temperature. The sensor based on doped NiO sensing films gave four to nine times faster response and four to six times faster recovery speeds than those of sensor with undoped NiO films, which is important for the NiO sensor practical applications. Moreover, we found that the doped NiO sensors owned outstanding selectivity toward ammonia.