Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism.

In this paper, a detailed description of the optical coupling into a Whispering Gallery Mode (WGM) resonator through a prism via frustrated total internal reflection (FTIR) is presented. The problem is modeled as three media with planar interfaces and closed expressions for FTIR are given. Then, the curvature of the resonator is taken into account and the mode overlap is theoretically studied. A new analytical expression giving the optimal geometry of a disc-shaped or ring-shaped resonator for maximizing the intra-cavity circulating power is presented. Such expression takes into consideration the spatial distribution of the WGM at the surface of the resonator, thus being more accurate than the currently used expressions. It also takes into account the geometry of the prism. It is shown an improvement in the geometry values used with the current expressions of about 30%. The reason why the pump laser signal can be seen in experiments under critical coupling is explained on this basis. Then, the conditions required for exciting the highest possible optical power inside the resonator are obtained. The aim is to achieve a highly-efficient up-conversion of a THz signal into the optical domain via the second-order nonlinearity of the resonator material.

Gateless patterning of epitaxial graphene by local intercalation.

We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling microscopy, scanning electron microscopy and Hall effect measurements. The technique introduces materials contrast to a graphene sheet in a variety of geometries and thus allows for novel experiments and novel functionalities.

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals.

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector is as large as 65±3dB/Hz, enabling applications in a large variety of experiments and setups, also including table-top systems.

A point-like thermal light source as a probe for sensing light-matter interaction.

Historically, thermal radiation is related to 3D cavities. In practice, however, it is known that almost any hot surface radiates according to Planck's law. This approximate universality roots in the smooth electromagnetic mode structure of free space, into which the radiation is emitted. Here, we study the effect for a strongly patterned mode structure and use quasi-transparent point-like thermal light emitters as a probe. As such, we choose current-driven graphene nanojunctions for which the emission into free space obeys Planck's law. Placed in front of a mirror, however, this process is highly sensitive to a node/antinode pattern of light modes. By varying the distance, we can sample the latter with atomic precision, and observe a deep imprint on the observed spectrum. The experiment allows an unprecedented view on thermal radiation in a spatially/spectrally patterned electromagnetic environment.

Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale.

Charge transport measurements form an essential tool in condensed matter physics. The usual approach is to contact a sample by two or four probes, measure the resistance and derive the resistivity, assuming homogeneity within the sample. A more thorough understanding, however, requires knowledge of local resistivity variations. Spatially resolved information is particularly important when studying novel materials like topological insulators, where the current is localized at the edges, or quasi-two-dimensional (2D) systems, where small-scale variations can determine global properties. Here, we demonstrate a new method to determine spatially-resolved voltage maps of current-carrying samples. This technique is based on low-energy electron microscopy (LEEM) and is therefore quick and non-invasive. It makes use of resonance-induced contrast, which strongly depends on the local potential. We demonstrate our method using single to triple layer graphene. However, it is straightforwardly extendable to other quasi-2D systems, most prominently to the upcoming class of layered van der Waals materials.

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures.

We have measured the nonlocal resistance of aluminum-iron spin-valve structures fabricated by e-beam lithography and shadow evaporation. The sample geometry consists of an aluminum bar with two or more ferromagnetic wires forming point contacts to the aluminum at varying distances from each other. In the normal state of aluminum, we observe a spin-valve signal which allows us to control the relative orientation of the magnetizations of the ferromagnetic contacts. In the superconducting state, at low temperatures and excitation voltages well below the gap, we observe a spin-dependent nonlocal resistance which decays on a smaller length scale than the normal-state spin-valve signal. The sign, magnitude, and decay length of this signal are consistent with predictions made for crossed Andreev reflection.

Driving current through single organic molecules.

We investigate electronic transport through two types of conjugated molecules. Mechanically controlled break junctions are used to couple thiol end groups of single molecules to two gold electrodes. Current-voltage characteristics ( IVs) of the metal-molecule-metal system are observed. These IVs reproduce the spatial symmetry of the molecules with respect to the direction of current flow. We hereby unambiguously detect an intrinsic property of the molecule and are able to distinguish the influence of both the molecule and the contact to the metal electrodes on the transport properties of the compound system.