Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction.

Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device. The proposed CS-NDR device has superior linear gate-tunable NDR behavior and highly reproducible properties compared to the previously reported NDR devices, as the fundamental mechanism of the CS-NDR device is directly related to a charge transport channel switching by the linear increase of the applied drain voltage. We also experimentally demonstrate that the photoinduced NDR behavior of the CS-NDR device was derived from the grain boundaries of dinaphtho[2;3-b:2',3'-f]-thieno[3,2-b]thiophene. Furthermore, this work produces a 9 × 9 CS-NDR device array composed of 81 devices, providing the reproducibility and uniformity of the CS-NDR device. Finally, we successfully demonstrate the detection of text images with 81 CS-NDR devices using the proposed photo/gate cotunable NDR behavior.

Overcoming Downscaling Limitations in Organic Semiconductors: Strategies and Progress.

Organic semiconductors have great potential to revolutionize electronics by enabling flexible and eco-friendly manufacturing of electronic devices on plastic film substrates. Recent research and development led to the creation of printed displays, radio-frequency identification tags, smart labels, and sensors based on organic electronics. Over the last 3 decades, significant progress has been made in realizing electronic devices with unprecedented features, such as wearable sensors, disposable electronics, and foldable displays, through the exploitation of desirable characteristics in organic electronics. Neverthless, the down-scalability of organic electronic devices remains a crucial consideration. To address this, efforts are extensively explored. It is of utmost importance to further develop these alternative patterning methods to overcome the downscaling challenge. This review comprehensively discusses the efforts and strategies aimed at overcoming the limitations of downscaling in organic semiconductors, with a particular focus on four main areas: 1) lithography-compatible organic semiconductors, 2) fine patterning of printing methods, 3) organic material deposition on pre-fabricated devices, and 4) vertical-channeled organic electronics. By discussing these areas, the full potential of organic semiconductors can be unlocked, and the field of flexible and sustainable electronics can be advanced.

Nanoscale Channel Gate-Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers.

Adhesion lithography offers to fabrication of coplanar asymmetric nanogap electrodes with a low-cost and facile process. In this study, a gate-tunable diode with coplanar asymmetric nanogap is fabricated using adhesion lithography. A fluoropolymer material is introduced to the adhesion lithography process to ensure a manufacturing patterning process yield as high as 96.7%. The asymmetric electrodes formed a built-in potential, leading to rectifying behavior. The coplanar electrode structure allowed the use of a gate electrode in vertical contact with the channel, resulting in gate-tunable diode characteristics. The nanoscale channel induced a high current density (3.38 × 10-7  A∙cm-1 ), providing a high rectification ratio (1.67 × 105  A∙A-1 ). This rectifier diode is confirmed to operate with pulsed input signals and suggests the gate-tunability of nanogap diodes.

Recent Advances in Photo-Activated Chemical Sensors.

Gas detectors have attracted considerable attention for monitoring harmful gases and air pollution because of industry development and the ongoing interest in human health. On the other hand, conventional high-temperature gas detectors are unsuitable for safely detecting harmful gases at high activation temperatures. Photo-activated gas detectors improve gas sensing performance at room temperature and enable low-power operation. This review presents a timely overview of photo-activated gas detectors that use illuminated light instead of thermal energy. Illuminated light assists in gas detection and is classified as visible or ultraviolet light. The research on photo-activated gas detectors is organized according to the type of gas that can be intensively detected. In addition, a development strategy for advancing photo-activated gas detectors is discussed.

Systematic Control of Negative Transconductance in Organic Heterojunction Transistor for High-Performance, Low-Power Flexible Ternary Logic Circuits.

Organic multi-valued logic (MVL) circuits can substantially improve the data processing efficiency in highly advanced wearable electronics. Organic ternary logic circuits can be implemented by utilizing the negative transconductance (NTC) of heterojunction transistors (H-TRs). To achieve high-performance organic ternary logic circuits, the range of NTC in H-TRs must be optimized in advance to ensure the well-defined intermediate logic state in ternary logic inverters (T-inverters). Herein, a simple and efficient strategy, which enables the systematic control of the range and position of NTC in H-TRs is presented. Each thickness of p-/n-type semiconductor in H-TRs is adjusted to control the channel conductivity. Furthermore, asymmetric source/drain (S/D) electrode structure is newly developed for H-TRs, which can adjust the amount of hole and electron injection, independently. Based on the semiconductor thickness variation and asymmetric S/D electrodes, the T-inverter exhibits full-swing operation with three distinguishable logic states, resulting in unprecedentedly high static noise margin (≈48% of the ideal value). Moreover, a flexible T-inverter with an ultrathin polymer dielectric is demonstrated, whose operating voltage is less than 8 V. The proposed strategy is fully compatible with the conventional integrated circuit design, which is highly desirable for broad applicability and scalability for various types of T-inverter production.

Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates.

Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS2) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO2/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS2 film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS2 film. Using the proposed water-assisted and recyclable transfer, MoS2/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.

Self-Powered Sensors: New Opportunities and Challenges from Two-Dimensional Nanomaterials.

Nanomaterials have gained considerable attention over the last decade, finding applications in emerging fields such as wearable sensors, biomedical care, and implantable electronics. However, these applications require miniaturization operating with extremely low power levels to conveniently sense various signals anytime, anywhere, and show the information in various ways. From this perspective, a crucial field is technologies that can harvest energy from the environment as sustainable, self-sufficient, self-powered sensors. Here we revisit recent advances in various self-powered sensors: optical, chemical, biological, medical, and gas. A timely overview is provided of unconventional nanomaterial sensors operated by self-sufficient energy, focusing on the energy source classification and comparisons of studies including self-powered photovoltaic, piezoelectric, triboelectric, and thermoelectric technology. Integration of these self-operating systems and new applications for neuromorphic sensors are also reviewed. Furthermore, this review discusses opportunities and challenges from self-powered nanomaterial sensors with respect to their energy harvesting principles and sensing applications.

Synthesis of Lead-Free CaTiO3 Oxide Perovskite Film through Solution Combustion Method and Its Thickness-Dependent Hysteresis Behaviors within 100 mV Operation.

Perovskite is attracting considerable interest because of its excellent semiconducting properties and optoelectronic performance. In particular, lead perovskites have been used extensively in photovoltaic, photodetectors, thin-film transistors, and various electronic applications. On the other hand, the elimination of lead is essential because of its strong toxicity. This paper reports the synthesis of lead-free calcium titanate perovskite (CaTiO3) using a solution-processed combustion method. The chemical and morphological properties of CaTiO3 were examined as a function of its thickness by scanning electron microscopy, X-ray diffraction (XRD), atomic force microscopy, X-ray photoelectron spectroscopy, and ultraviolet-visible spectrophotometry. The analysis showed that thicker films formed by a cumulative coating result in larger grains and more oxygen vacancies. Furthermore, thickness-dependent hysteresis behaviors were examined by fabricating a metal-CaTiO3-metal structure. The electrical hysteresis could be controlled over an extremely low voltage operation, as low as 100 mV, by varying the grain size and oxygen vacancies.

Flexible MoS2-Polyimide Electrode for Electrochemical Biosensors and Their Applications for the Highly Sensitive Quantification of Endocrine Hormones: PTH, T3, and T4.

Flexibile biosensors have a lot of applications in measuring the concentration of target bioanalytes. In combination with its flexibility, electrochemical sensors containing 2D materials have particular advantages such as enlarged area compatibility, transparency, and high scalability. A flexible biosensor was fabricated by direct synthesis of molybdenum disulfide (MoS2) on a polyimide (PI) substrate, which can be used as the working electrode in electrochemistry platforms. The direct formation of 2D-MoS2 on the PI was achieved using plasma-enhanced chemical vapor deposition (PE-CVD). Since the MoS2 provides higher electrical conductivity, the MoS2-Au-PI flexible sensor is able to provide highly sensitive detection of target proteins with a relatively fast response via cyclic voltammetry. To evaluate the high performance of the fabricated sensor, we selected the endocrine-related hormones parathyroid hormone (PTH), triiodothyronine (T3), and thyroxine (T4) as analytes because they are one of the most important markers for the determination of endocrinopathy, however, they are very difficult to quantify. The newly developed biosensor achieved highly sensitive detection of the hormones and could determine their location with high accuracy. In addition, we performed electrochemical measurements of hormones obtained from 30 clinical patients' sera with confirmed agreement and compared with the measurements performed with standard immunoassay equipment (E 170, Roche Diagnostics, Germany).

Wafer-Scale and Low-Temperature Growth of 1T-WS2 Film for Efficient and Stable Hydrogen Evolution Reaction.

The metallic 1T phase of WS2 (1T-WS2 ), which boosts the charge transfer between the electron source and active edge sites, can be used as an efficient electrocatalyst for the hydrogen evolution reaction (HER). As the semiconductor 2H phase of WS2 (2H-WS2 ) is inherently stable, methods for synthesizing 1T-WS2 are limited and complicated. Herein, a uniform wafer-scale 1T-WS2 film is prepared using a plasma-enhanced chemical vapor deposition (PE-CVD) system. The growth temperature is maintained at 150 °C enabling the direct synthesis of 1T-WS2 films on both rigid dielectric and flexible polymer substrates. Both the crystallinity and number of layers of the as-grown 1T-WS2 are verified by various spectroscopic and microscopic analyses. A distorted 1T structure with a 2a0 × a0 superlattice is observed using scanning transmission electron microscopy. An electrochemical analysis of the 1T-WS2 film demonstrates its similar catalytic activity and high durability as compared to those of previously reported untreated and planar 1T-WS2 films synthesized with CVD and hydrothermal methods. The 1T-WS2 does not transform to stable 2H-WS2 , even after a 700 h exposure to harsh catalytic conditions and 1000 cycles of HERs. This synthetic strategy can provide a facile method to synthesize uniform 1T-phase 2D materials for electrocatalysis applications.

Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials.

Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.

Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics.

With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the potential formation of both p- and n-channels by injecting holes and electrons owing to the presence of the two gate electrodes. Applying voltage to the split-gate allows for the control of the Fermi level and, consequently, the barrier height in the device. This facilitates band bending in unipolar transistors and allows ambipolar transistors to operate as if unipolar. Moreover, the split-gate serves as a revolutionary tool to modulate the contact resistance by controlling the barrier height. This approach enables the precise control of the device by biasing the partial electric field without limitations on materials, making it adaptable for various applications, as reported in various types of research. However, the gap length between gates can affect the injection of the electric field for the precise control of carriers. Hence, the design of the gap length is a critical element for the split-gate structure. The primary investigation in this review is the introduction of split-gate technology applied in various applications by using diverse materials, the methods for forming the split-gate in each device, and the operational mechanisms under applied voltage conditions.

Strengthening Multi-Factor Authentication Through Physically Unclonable Functions in PVDF-HFP-Phase-Dependent a-IGZO Thin-Film Transistors.

For enhanced security in hardware-based security devices, it is essential to extract various independent characteristics from a single device to generate multiple keys based on specific values. Additionally, the secure destruction of authentication information is crucial for the integrity of the data. Doped amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) induce a dipole doping effect through a phase-transition process, creating physically unclonable function (PUF) devices for secure user information protection. The PUF security key, generated at VGS = 20 V in a 20 × 10 grid, demonstrates uniformity of 42% and inter-Hamming distance (inter-HD) of 49.79% in the ß-phase of PVDF-HFP. However, in the γ-phase, the uniformity drops to 22.5%, and inter-HD decreases to 35.74%, indicating potential security key destruction during the phase transition. To enhance security, a multi-factor authentication (MFA) system is integrated, utilizing five security keys extracted from various TFT parameters. The security keys from turn-on voltage (VON), VGS = 20 V, VGS = 30 V, mobility, and threshold voltage (Vth) exhibit near-ideal uniformities and inter-HDs, with the highest values of 58% and 51.68%, respectively. The dual security system, combining phase transition and MFA, establishes a robust protection mechanism for privacy-sensitive user information.

Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition.

Phototransistors have gained significant attention in diverse applications such as photodetectors, image sensors, and neuromorphic devices due to their ability to control electrical characteristics through photoresponse. The choice of photoactive materials in phototransistor research significantly impacts its development. In this study, we propose a novel device that emulates artificial synaptic behavior by leveraging the off-current of a phototransistor. We utilize a p-type organic semiconductor, dinaphtho[2,3-b:2',3'- f]thieno[3,2-b]thiophene (DNTT), as the channel material and dope it with the organic semiconductor 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) on the DNTT transistor. Under light illumination, the general DNTT transistor shows no change in off-current, except at 400 nm wavelength, whereas the TPBi-doped DNTT phototransistor exhibits increased off-current across all wavelength bands. Notably, DNTT phototransistors demonstrate broad photoresponse characteristics in the wavelength range of 400-1000 nm. We successfully simulate artificial synaptic behavior by differentiating the level of off-current and achieving a recognition rate of over 70% across all wavelength bands.

A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures.

Conventional transistors have long emphasized signal modulation and amplification, often sidelining polarity considerations. However, the recent emergence of negative differential transconductance, characterized by a drain current decline during gate voltage sweeping, has illuminated an unconventional path in transistor technology. This phenomenon promises to simplify the implementation of ternary logic circuits and enhance energy efficiency, especially in multivalued logic applications. Our research has culminated in the development of a sophisticated mixed transconductance transistor (M-T device) founded on a precise Te and IGZO heterojunction. The M-T device exhibits a sequence of intriguing phenomena, zero differential transconductance (ZDT), positive differential transconductance (PDT), and negative differential transconductance (NDT) contingent on applied gate voltage. We clarify its operation using a three-segment equivalent circuit model and validate its viability with IGZO TFT, Te TFT, and Te/IGZO TFT components. In a concluding demonstration, the M-T device interconnected with Te TFT achieves a ternary inverter with an intermediate logic state. Remarkably, this configuration seamlessly transitions into a binary inverter when it is exposed to light.

Versatile Papertronics: Photo-induced Synapse and Security Applications on Papers.

Paper is a readily available material in nature. Its recyclability, eco-friendliness, portability, flexibility, and affordability make it a favored substrate for researchers seeking cost-effective solutions. Electronic devices based on solution process were fabricated on paper and banknotes using PVK and SnO2 nanoparticles. The devices manufactured on paper substrates exhibited photosynaptic behavior under ultraviolet pulse illumination, stemming from numerous interactions on the surface of the SnO2 nanoparticles. A light-modulated artificial synapse device was realized on a paper at a low voltage bias of -0.01 V, with an average recognition rate of 91.7% based on the Yale Face Database. As a security device on a banknote, 400 devices in a 20 × 20 array configuration exhibited random electrical characteristics owing to the local morphology of the SnO2 nanoparticles and differences in the depletion layer width at the SnO2/PVK interface. The security PUF key based on the current distribution extracted at -1 V showed unpredictable reproducibility with 50% uniformity, 48.7% inter-Hamming distance, and 50.1% bit-aliasing rates. Moreover, the device maintained its properties for more than 210 d under a curvature radius of 8.75 mm and bias and UV irradiation stress conditions. This article is protected by copyright. All rights reserved.

Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap.

Due to the increasing complexity in miniaturization of electronic devices, reconfigurable field-effect transistors (RFETs) have emerged as a solution. Although the foundational concepts of RFETs have matured over two decades, ongoing breakthroughs are needed to address challenges such as improving the device performance as well as achieving balanced symmetry between n-type and p-type transport modes with long-term stability. Herein, we present a nonvolatile WSe2-based RFET that utilizes photoassisted interfacial charge trapping at the h-BN and SiO2 interface. Unlike typical RFETs with two gate electrodes, our RFETs achieved polarity control with a single operating gate activated exclusively under white-light exposure. The threshold voltage was tunable, ranging from 27.4 (-31.6 V) to 0.9 (+19.5 V), allowing selective activation of n-type (p-type) operation at VGS = 0 V. Additionally, our WSe2-based RFETs show superior repeatability and long-term stability. Leveraging these advantages, various reconfigurable logic circuits were successfully demonstrated, including complementary inverters and switch circuits as well as pull-up and pull-down circuits, highlighting the potential of WSe2 FETs for future advancements of integrated circuits.

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.

Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.

Highly parallel and ultra-low-power probabilistic reasoning with programmable gaussian-like memory transistors.

Probabilistic inference in data-driven models is promising for predicting outputs and associated confidence levels, alleviating risks arising from overconfidence. However, implementing complex computations with minimal devices still remains challenging. Here, utilizing a heterojunction of p- and n-type semiconductors coupled with separate floating-gate configuration, a Gaussian-like memory transistor is proposed, where a programmable Gaussian-like current-voltage response is achieved within a single device. A separate floating-gate structure allows for exquisite control of the Gaussian-like current output to a significant extent through simple programming, with an over 10000 s retention performance and mechanical flexibility. This enables physical evaluation of complex distribution functions with the simplified circuit design and higher parallelism. Successful implementation for localization and obstacle avoidance tasks is demonstrated using Gaussian-like curves produced from Gaussian-like memory transistor. With its ultralow-power consumption, simplified design, and programmable Gaussian-like outputs, our 3-terminal Gaussian-like memory transistor holds potential as a hardware platform for probabilistic inference computing.

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors.

Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.