Fabrication of TiO2 Nanostructures on Ti3SiC2 Substrate by Anodic Oxidation.

A TiO2 nanostructure was prepared on a Ti3SiC2 substrate with different water and NH4F concentrations in a fluoride-containing ethylene glycol electrolyte via an anodization process using the same constant-anodization potentials, anodization duration and temperature. The as-prepared samples were characterized by a field-emission scanning electron microscope equipped with an energy dispersive X-ray spectroscope, as well as by X-ray diffraction and X-ray photoelectron spectroscopy. The influence of the anodizing parameters and annealing temperature on the morphology of the nanostructure and the phase structure was studied. The results showed that the scattered TiO2 nanotubes and TiO2 nanoporous films were successfully fabricated in the glycol electrolyte containing (3.0 wt%) NH4F +(5.0 vol%) H2O. The as-prepared samples before calcination were amorphous and could transform to the anatase phase at temperatures higher than 500 °C. As the annealing temperature increased, the crystallization of the anatase phase was enhanced, and the rutile phase appeared at 600 °C. The as-prepared samples mainly consisted of oxides. Ti2O3 and SiO2 oxides were present in addition to TiO2.

Mn- and Yb-Doped BaTiO3-(Na0.5Bi0.5)TiO3 Ferroelectric Relaxor with Low Dielectric Loss.

In this work, a Mn-and Yb-doped BaTiO3-(Na0.5Bi0.5)TiO3 ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite structure. The SEM images show the homogeneous microstructure of ceramics with an average grain size of about 1 µm. The temperature-dependent permittivity shows relaxor characteristics as Mn-doped. Mn at a low level (x ≤ 0.005) is beneficial for low dielectric loss and high resistivity. The maximum resistivity of ≥3 × 1012 Ω cm and minimum dielectric loss of ≤0.06 can be achieved at x ≤ 0.005. The resistivity of the ceramics follows the Arrhenius law with activation energy decreasing from ~1.31 to 1.01 eV as x increases. With lower Mn dopant, oxygen vacancies and charge carrier concentration partially decrease with Mn doping, which is helpful to improve the insulation resistance and decrease the dielectric loss.