High-Coupled Magnetic-Levitation Hybrid Nanogenerator with Frequency Multiplication Effect for Wireless Water Level Alarm.

Hybrid nanogenerators (HNGs) represent a promising avenue for water energy harvesting, yet their commercial viability faces hurdles such as limited power output, poor coupling, and constrained operational lifespans. Here, a highly coupled triboelectric-electromagnetic magnetic-levitation hybrid nanogenerator (ML-HNG) is introduced that shows great potential for water energy harvesting. The ML-HNG fulfills the challenges of high power output, strong coupling, and long operational lifespans. During the contact-separation process of the triboelectric nanogenerator (TENG), the changing magnetic flux in the electromagnetic generator's coils generates a potential difference between the coils and Cu electrodes. The unique design of the ML-HNG employs a shared coil electrode configuration, which enhances the coupling without adding extra volume. This integration allows the ML-HNG to achieve multi-frequency vibrations and multiple output cycles per external longitudinal movement, a phenomenon known as the frequency multiplication effect. With an average power density of 1.69 W m-3 in water, the ML-HNG provides continuous power for a thermo-hygrometer and can quickly drive a wireless water level alarm system within a minute. This groundbreaking hybrid nanogenerator design holds significant promise for the efficient and consistent harvesting of low-frequency ocean wave energy, marking a substantial advancement in blue energy technology.

Elastic Self-Recovering Hybrid Nanogenerator for Water Wave Energy Harvesting and Marine Environmental Monitoring.

To achieve large-scale development of triboelectric nanogenerators (TENGs) for water wave energy harvesting and powering the colossal sensors widely distributed in the ocean, facile and scalable TENGs with high output are urgently required. Here, an elastic self-recovering hybrid nanogenerator (ES-HNG) is proposed for water wave energy harvesting and marine environmental monitoring. The elastic skeletal support of the ES-HNG is manufactured using three-dimensional (3D) printing technology, which is more conducive to the large-scale integration of the ES-HNG. Moreover, the combination of a TENG and an electromagnetic generator (EMG) optimizes the utilization of device space, leading to enhanced energy harvesting efficiency. Experimental results demonstrate that the TENG achieves a peak power output of 42.68 mW, and the EMG reaches a peak power output of 4.40 mW. Furthermore, various marine environment monitoring sensors, such as a self-powered wireless meteorological monitoring system, a wireless alarm system, and a water quality monitoring pen, have been successfully powered by the sophisticated ES-HNG. This work introduces an ES-HNG for water wave energy harvesting, which demonstrates potential in marine environment monitoring and offers a new solution for the sustainable development of the marine internet of things.

p-n Junction Based Direct-Current Triboelectric Nanogenerator by Conjunction of Tribovoltaic Effect and Photovoltaic Effect.

Triboelectric nanogenerators (TENGs) have attracted much interest in recent years, due to its effectiveness and low cost for converting high-entropy mechanical energy into electric power. The traditional TENGs generate an alternating current, which requires a rectifier to provide a direct-current (DC) power supply. Herein, a dynamic p-n junction based direct-current triboelectric nanogenerator (DTENG) is demonstrated. When a p-Si wafer is sliding on a n-GaN wafer, carriers are generated at the interface and a DC current is produced along the direction of the built-in electric field, which is called the tribovoltatic effect. Simultaneously, an UV light is illuminated on the p-n junction to enhance the output. The results indicate that the current increases 13 times and the voltage increases 4 times under UV light (365 nm, 28 mW/cm2) irradiation. This work demonstrates the coupling between the tribovoltaic effect and the photovoltaic effect in DTENG semiconductors, promoting further development for energy harvesting in mechanical energy and photon energy.

A composite triboelectric nanogenerator based on flexible and transparent film impregnated with ZIF-8 nanocrystals.

The triboelectric nanogenerator (TENG), based on the triboelectrification coupled with electrostatic induction, can directly convert ambient mechanical energy into electric energy. However, the output performance of TENG is still low and demands further improvement to speed up the commercial application. In this work, we demonstrate a TENG based on a flexible and transparent composite film made of PDMS and ZIF-8. When the amount of the ZIF-8 is 4 wt%, the generated output current and voltage of the TENG are gradually increased up to 16.3µA and 176 V, which are 210% and 230% higher than that of TENG without ZIF-8, respectively. Impregnated ZIF-8 which exhibits a positive polarity lowers the effective work function of the PDMS and enhance the surface charge density, verified by Kelvin probe force microscope measurement.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires.

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

A Polymeric Bilayer Multi-Legged Soft Millirobot with Dual Actuation and Humidity Sensing.

There are numerous works that report wirelessly controlling the locomotion of soft robots through a single actuation method of light or magnetism. However, coupling multiple driving modes to improve the mobility of robots is still in its infancy. Here, we present a soft multi-legged millirobot that can move, climb a slope, swim and detect a signal by near-infrared irradiation (NIR) light or magnetic field dual actuation. Due to the design of the feet structure, our soft millirobot incorporates the advantages of a single actuation mode of light or magnetism. Furthermore, it can execute a compulsory exercise to sense a signal and analyze the ambience fluctuation in a narrow place. This work provides a novel alternative for soft robots to achieve multimode actuation and signal sensing.

Piezo-Phototronic Matrix via a Nanowire Array.

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity.

Piezotronic effect tuned AlGaN/GaN high electron mobility transistor.

The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

Raman study of 2D anatase TiO2 nanosheets.

Herein, we present for the first time a spectroscopic study of two-dimensional (2D) anatase TiO2 nanosheets. Previous publications demonstrated that Raman spectroscopy was mostly employed to characterize the TiO2 nanoparticle size and the phase transition of amorphous-anatase and anatase-rutile. In this study, TiO2 nanosheets were characterized by XRD, AFM and Raman spectroscopy, which demonstrated a shift toward higher frequency and broadening in the full width at half maximum of the characteristic Eg mode by decreasing the thickness of anatase TiO2 with a 2D nanostructure. In contrast to the study of TiO2 nanoparticles, the Raman vibrations can be attributed to phonon confinement in 2D TiO2 nanosheets which can be employed to characterize the thickness of TiO2 nanosheets. In order to effectively identify the thickness of the 2D TiO2 nanostructure, we established a reliable method for the examination by characterizing the shifts of the Eg mode.

A self-powered AC magnetic sensor based on piezoelectric nanogenerator.

An AC magnetic field, which is a carrier of information, is distributed everywhere and is continuous. How to use and detect this field has been an ongoing topic over the past few decades. Conventional magnetic sensors are usually based on the Hall Effect, the fluxgate, a superconductor quantum interface or magnetoelectric or magnetoresistive sensing. Here, a flexible, simple, low-cost and self-powered active piezoelectric nanogenerator (NG) is successfully demonstrated as an AC magnetic field sensor at room temperature. The amplitude and frequency of a magnetic field can both be accurately sensed by the NG. The output voltage of the NG has a good linearity with a measured magnetic field. The detected minute magnetic field is as low as 1.2 × 10(-7) tesla, which is 400 times greater than a commercial magnetic sensor that uses the Hall Effect. In comparison to the existing technologies, an NG is a room-temperature self-powered active sensor that is very simple and very cheap for practical applications.

Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics.

Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe2, h-BN, and CuInP2S6 as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 103. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications.

Localizing strain via micro-cage structure for stretchable pressure sensor arrays with ultralow spatial crosstalk.

Tactile sensors with high spatial resolution are crucial to manufacture large scale flexible electronics, and low crosstalk sensor array combined with advanced data analysis is beneficial to improve detection accuracy. Here, we demonstrated the photo-reticulated strain localization films (prslPDMS) to prepare the ultralow crosstalk sensor array, which form a micro-cage structure to reduce the pixel deformation overflow by 90.3% compared to that of conventional flexible electronics. It is worth noting that prslPDMS acts as an adhesion layer and provide spacer for pressure sensing. Hence, the sensor achieves the sufficient pressure resolution to detect 1 g weight even in bending condition, and it could monitor human pulse under different states or analyze the grasping postures. Experiments show that the sensor array acquires clear pressure imaging and ultralow crosstalk (33.41 dB) without complicated data processing, indicating that it has a broad application prospect in precise tactile detection.

Silicon flexoelectronic transistors.

It is extraordinarily challenging to implement adaptive and seamless interactions between mechanical triggering and current silicon technology for tunable electronics, human-machine interfaces, and micro/nanoelectromechanical systems. Here, we report Si flexoelectronic transistors (SFTs) that can innovatively convert applied mechanical actuations into electrical control signals and achieve directly electromechanical function. Using the strain gradient-induced flexoelectric polarization field in Si as a "gate," the metal-semiconductor interfacial Schottky barriers' heights and the channel width of SFT can be substantially modulated, resulting in tunable electronic transports with specific characteristics. Such SFTs and corresponding perception system can not only create a high strain sensitivity but also identify where the mechanical force is applied. These findings provide an in-depth understanding about the mechanism of interface gating and channel width gating in flexoelectronics and develop highly sensitive silicon-based strain sensors, which has great potential to construct the next-generation silicon electromechanical nanodevices and nanosystems.

Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator.

As one of the promising non-volatile memories (NVMs), resistive random access memory (RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on external power to induce resistance-switching, which restricts its applications. In this work, we have developed a self-powered RRAM that consists of a Pr0.7Ca0.3MnO3 (PCMO) film and a triboelectric nanogenerator (TENG). With a traditional power supply, the resistance switch ratio achieves the highest switching ratio reported so far, 9 × 107. By converting the mechanical energy harvested by a TENG into electrical energy to power the PCMO film, we demonstrate self-powered resistance-switching induced by mechanical movement. The prepared PCMO shows excellent performance of resistance switching driven by the TENG, and the resistance switch ratio is up to 2 × 105, which is higher than the ones ever reported. In addition, it can monitor real-time mechanical changes and has a good response to the electrical signals of different waveforms. This self-powered resistance switching can be induced by random movements based on the TENG. It has potential applications in the fields of self-powered sensors and human-machine interaction.

Hollow Ni3Se4 with High Tap Density as a Carbon-Free Sulfur Immobilizer to Realize High Volumetric and Gravimetric Capacity for Lithium-Sulfur Batteries.

Despite that the practical gravimetric energy density of lithium sulfur batteries has exceeded that of the traditional lithium-ion battery, the volumetric energy density still pales due to the low density of carbonaceous materials. Herein, hollow polar nickel selenide (Ni3Se4) with various architectures was designed and employed as a carbon-free sulfur immobilizer. Among them, hollow sea urchins like Ni3Se4 with high porosity (0.39 cm3 g-1) and large specific surface area (82.7 m2 g-1) exhibit abundant adsorptive and electrocatalytic sites, which pledge excellent electrochemical performances of the Li-S battery. Correspondingly, the Ni3Se4-based sulfur electrode presents excellent rate endurability (581 mAh g-1-composite at 2.0 C) and superior cycle stability (ultralow fading rate of 0.042% per cycle during the 1000 cycles at 1.0 C). More importantly, thanks to the higher tap density (Ni3Se4/S: 1.57 g cm-3 vs super P/S: 0.7 g cm-3), the volumetric specific capacity of Ni3Se4-based cathodes is as high as 1699 mAh cm-3-composite at 0.1 C, which is almost 2.8 times that of the carbonaceous electrode. Hence, rational transition metal selenide architecture design with synergistic function of good conductivity, well-defined catalyst and adsorption, as well as high tap density provide a promising route toward high gravimetric and volumetric energy density of Li-S batteries.

Highly sensitive strain sensors based on piezotronic tunneling junction.

Piezotronics with capacity of constructing adaptive and seamless interactions between electronics/machines and human/ambient are of value in Internet of Things, artificial intelligence and biomedical engineering. Here, we report a kind of highly sensitive strain sensor based on piezotronic tunneling junction (Ag/HfO2/n-ZnO), which utilizes the strain-induced piezoelectric potential to control the tunneling barrier height and width in parallel, and hence to synergistically modulate the electrical transport process. The piezotronic tunneling strain sensor has a high on/off ratio of 478.4 and high gauge factor of 4.8 × 105 at the strain of 0.10%, which is more than 17.8 times larger than that of a conventional Schottky-barrier based strain sensor in control group as well as some existing ZnO nanowire or nanobelt based sensors. This work provides in-depth understanding for the basic mechanism of piezotronic modulation on tunneling junction, and realizes the highly sensitive strain sensor of piezotronic tunneling junction on device scale, which has great potential in advanced micro/nano-electromechanical devices and systems.

Tactile tribotronic reconfigurable p-n junctions for artificial synapses.

The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems. Here, a robust and continuously adjustable mechanoplastic semifloating-gate transistor is demonstrated based on an integrated graphene/hexagonal boron nitride/tungsten diselenide van der Waals heterostructure and a triboelectric nanogenerator (TENG). The working states (p-n junction or n+-n junction) can be manipulated and switched under the sophisticated modulation of triboelectric potential derived from mechanical actions, which is attributed to carriers trapping and detrapping in the graphene layer. Furthermore, a reconfigurable artificial synapse is constructed based on such mechanoplastic transistor that can simulate typical synaptic plasticity and implement dynamic control correlations in each response mode by further designing the amplitude and duration. The artificial synapse can work with ultra-low energy consumption at 74.2 fJ per synaptic event and the extended synaptic weights. Under the synergetic effect of the semifloating gate, the synaptic device can enable successive mechanical facilitation/depression, short-/long-term plasticity and learning-experience behavior, exhibiting the mechanical behavior derived synaptic plasticity. Such reconfigurable and mechanoplastic features provide an insight into the applications of energy-efficient and real-time interactive neuromodulation in the future artificial intelligent system beyond von Neumann architecture.

An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector.

Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO2) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on-off ratio of 2.49 × 105, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO2 heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light-dark ratio was increased by 8.40 × 105 times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.

Elastic Kernmantle E-Braids for High-Impact Sports Monitoring.

The kernmantle construction, a kind of braiding structure that is characterized by the kern absorbing most of the stress and the mantle protecting the kern, is widely employed in the field of loading and rescue services, but rarely in flexible electronics. Here, a novel kernmantle electronic braid (E-braid) for high-impact sports monitoring, is proposed. The as-fabricated E-braids not only demonstrate high strength (31 Mpa), customized elasticity, and nice machine washability (>500 washes) but also exhibit excellent electrical stability (>200 000 cycles) during stretching. For demonstration, the E-braids are mounted to different parts of the trampoline for athletes' locomotor behavior monitoring. Furthermore, the E-braids are proved to act as multifarious intelligent sports gear or wearable equipment such as electronic jump rope and respiration monitoring belt. This study expands the kernmantle structure to soft flexible electronics and then accelerates the development of quantitative analysis in modern sports industry and athletes' healthcare.

Ultralight, Elastic, Hybrid Aerogel for Flexible/Wearable Piezoresistive Sensor and Solid-Solid/Gas-Solid Coupled Triboelectric Nanogenerator.

Aerogels have been attracting wide attentions in flexible/wearable electronics because of their light weight, excellent flexibility, and electrical conductivity. However, multifunctional aerogel-based flexible/wearable electronics for human physiological/motion monitoring, and energy harvest/supply for mobile electronics, have been seldom reported yet. In this study, a kind of hybrid aerogel (GO/CNT HA) based on graphene oxide (GO) and carboxylated multiwalled carbon nanotubes (CMWCNTs) is prepared which can not only used as piezoresistive sensors for human motion and physiological signal detections, but also as high performance triboelectric nanogenerator (TENG) coupled with both solid-solid and gas-solid contact electrifications (CE). The repeatedly loading-unloading tests with 20 000 cycles exhibit its high and ultrastable piezoresistive sensor performances. Moreover, when the obtained aerogel is used as the electrode of a TENG, high electric output performance is produced due to the synergistic effect of solid-solid, and gas-solid interface CEs (3D electrification: solid-solid interface CE between the two solid electrification layers; gas-solid interface CE between the inner surface of GO/CNT HA and the air filled in the aerogel pores). This kind of aerogel promises good applications for human physiological/motion monitoring and energy harvest/supply in flexible/wearable electronics such as piezoresistive sensors and flexible TENG.