Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy.

Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D

Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D.

Afiliação

Arroyo Rojas Dasilva Y; Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
Kozak R; Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
Erni R; Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.
Rossell MD; Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland. Electronic address: marta.rossell@empa.ch.

Ultramicroscopy ; 176: 11-22, 2017 05.

Article em En | MEDLINE | ID: mdl-27838069

Palavras-chave

Cubic semiconductors; Dislocations; Scanning transmission electron microscopy; Structural defects; Twinning; Zincblende structure

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Ultramicroscopy Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Suíça

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