Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique.

Al Saqri, Noor Alhuda; Felix, Jorlandio F; Aziz, Mohsin; Kunets, Vasyl P; Jameel, Dler; Taylor, David; Henini, Mohamed; Abd El-Sadek, Mahmmoud S; Furrow, Colin; Ware, Morgan E; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

Al Saqri, Noor Alhuda; Felix, Jorlandio F; Aziz, Mohsin; Kunets, Vasyl P; Jameel, Dler; Taylor, David; Henini, Mohamed; Abd El-Sadek, Mahmmoud S; Furrow, Colin; Ware, Morgan E; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory.

Afiliação

Al Saqri NA; School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD, UK. Department of Physics, College of Science, Box 36, Sultan Qaboos University, Al Khoud 123, Oman.

Nanotechnology ; 28(4): 045707, 2017 Jan 27.

Article em En | MEDLINE | ID: mdl-27997370

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Omã

Texto completo

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Omã