Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor.

Tian, Baohua; Shang, Haiping; Zhao, Lihuan; Wang, Dahai; Liu, Yang; Wang, Weibing

Tian, Baohua; Shang, Haiping; Zhao, Lihuan; Wang, Dahai; Liu, Yang; Wang, Weibing.

Afiliação

Tian B; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Shang H; University of Chinese Academy of Sciences, Beijing 100049, China.
Zhao L; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Wang D; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Liu Y; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Wang W; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.

Sensors (Basel) ; 21(2)2021 Jan 07.

Article em En | MEDLINE | ID: mdl-33430417

Palavras-chave

all-silicon carbide (SiC); hermeticity; piezoresistive pressure sensor; room temperature bonding; sealed cavity structure

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sensors (Basel) Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China

Texto completo

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XML

PubMed Links

Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sensors (Basel) Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China