Reduction of dislocations in &#945;-Ga<sub>2</sub>O<sub>3</sub> epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate.

Reduction of dislocations in α-Ga₂O₃ epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate.

Son, Hoki; Choi, Ye-Ji; Hong, Soon-Ku; Park, Ji-Hyeon; Jeon, Dae-Woo.

Afiliação

Son H; Korea Institute of Ceramic Engineering and Technology, 15-5, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea.
Choi YJ; Department of Material Science and Engineering, Korea university, Seoul 02841, Republic of Korea.
Hong SK; Korea Institute of Ceramic Engineering and Technology, 15-5, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea.
Park JH; Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.
Jeon DW; Korea Institute of Ceramic Engineering and Technology, 15-5, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea.

IUCrJ ; 8(Pt 3): 462-467, 2021 May 01.

Article em En | MEDLINE | ID: mdl-33953932