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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
Lee, Gyeongyeop; Ha, Jonghyeon; Kim, Kihyun; Bae, Hagyoul; Kim, Chong-Eun; Kim, Jungsik.
Afiliação
  • Lee G; Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju 52828, Korea.
  • Ha J; Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju 52828, Korea.
  • Kim K; Division of Electronics Engineering and Future Semiconductor Convergence Technology Research Center, Jeonbuk National University, Jeonju 54896, Korea.
  • Bae H; Division of Electronics Engineering and Future Semiconductor Convergence Technology Research Center, Jeonbuk National University, Jeonju 54896, Korea.
  • Kim CE; Department of Control and Instrumentation Engineering, Gyeongsang National University (GNU), Jinju 52828, Korea.
  • Kim J; Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju 52828, Korea.
Micromachines (Basel) ; 13(6)2022 Jun 07.
Article em En | MEDLINE | ID: mdl-35744515
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2022 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2022 Tipo de documento: Article