Your browser doesn't support javascript.
loading
High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.
Xu, Ru; Chen, Peng; Zhou, Jing; Li, Yimeng; Li, Yuyin; Zhu, Tinggang; Cheng, Kai; Chen, Dunjun; Xie, Zili; Ye, Jiandong; Liu, Bin; Xiu, Xiangqian; Han, Ping; Shi, Yi; Zhang, Rong; Zheng, Youdou.
Afiliação
  • Xu R; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Chen P; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Zhou J; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Li Y; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Li Y; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Zhu T; Corenergy Semiconductor Incorporation, Suzhou, 215600, P. R. China.
  • Cheng K; Enkris Semiconductor Inc, NW-20, Nanopolis, Suzhou, 215000, P. R. China.
  • Chen D; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Xie Z; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Ye J; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Liu B; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Xiu X; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Han P; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Shi Y; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Zhang R; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
  • Zheng Y; The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
Small ; 18(37): e2107301, 2022 Sep.
Article em En | MEDLINE | ID: mdl-35869035
Palavras-chave
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article