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Enhancingß-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion onc-plane sapphire substrate.
Wang, Guodong; Wang, Haohan; Chen, Tingyu; Feng, Yanji; Zeng, Hua; Guo, Lanlan; Liu, Xiaolian; Yang, Yingli.
Afiliação
  • Wang G; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Wang H; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Chen T; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Feng Y; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Zeng H; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Guo L; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Liu X; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
  • Yang Y; Instrumental Analysis Center, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Nanotechnology ; 35(9)2023 Dec 12.
Article em En | MEDLINE | ID: mdl-37995378

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article